Fairchild FDD6688, FDU6688 service manual
FDD6688/FDU6688
FDD6688/FDU6688
30V N-Channel PowerTrench MOSFET
June 2004
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
Applications
• DC/DC converter
• Motor Drives
D
G
S
D-PAK
TO-252
(TO-252)
G D S
Absolute Maximum Ratings T
Symbo
Parameter Ratings Units
(TO-251AA)
=25oC unless otherwise noted
A
l
V
DSS
V
GSS
I
D
P
D
TJ, T
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous (Note 3) 84 A
– Pulsed (Note 1a) 100
Power Dissipation for Single Operation (Note 1) 83
Operating and Storage Junction Temperature Range –55 to +175
STG
I-PAK
(Note 1a)
(Note 1b)
Features
• 84 A, 30 V. R
R
• Low gate charge
• Fast switching
• High performance trench technology for extremely
low R
DS(ON)
= 5 mΩ @ VGS = 10 V
DS(ON)
= 6 mΩ @ VGS = 4.5 V
DS(ON)
D
G
S
±20
3.8
1.6
W
°C
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
2004 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case (Note 1) 1.8
Thermal Resistance, Junction-to-Ambient (Note 1a) 40
(Note 1b)
FDD6688 FDD6688 D-PAK (TO-252) 13’’ 12mm 2500 units
FDU6688 FDU6688 I-PAK (TO-251) Tube N/A 75
96
FDD6688/FDU6688 Rev F(W)
°C/W
Electrical Characteristics T
FDD6688/FDU6688
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
DSS
I
AR
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 21A 370 mJ
Drain-Source Avalanche Current 21 A
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown
VGS = 0 V, ID = 250 µA
Voltage
Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V ±100
30 V
24
mV/°C
µA
nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 18 A
VGS = 4.5 V, ID = 16.5 A
1 1.8 3 V
VGS = 10 V, ID = 18 A, TJ=125°C
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 5 V, ID = 18 A 88 S
–5
mV/°C
4
5
5
6
mΩ
6
10
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 3845 pF
Output Capacitance 930 pF
Reverse Transfer Capacitance
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.2
VDS = 15 V, V
f = 1.0 MHz
GS
= 0 V,
368 pF
Ω
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Turn–On Delay Time 15 27 ns
Turn–On Rise Time 13 23 ns
Turn–Off Delay Time 62 99 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 37 56 nC
Gate–Source Charge 10 nC
Gate–Drain Charge
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15V, ID = 18 A,
VGS = 5 V
36 58 ns
14 nC
FDD6688/FDU6688 Rev F(W)
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