Fairchild FDD6685 service manual
May 2011
FDD
6685
FDD6685
30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Features
• –40 A, –30 V. R
R
• Fast switching speed
• High performance trench technology for extremely
low R
• High power and current handling capability
• Qualified to AEC Q101
DS(ON)
= 20 mΩ @ VGS = –10 V
DS(ON)
= 30 mΩ @ VGS = –4.5 V
DS(ON)
S
D
G
G
S
TO-252
Absolute Maximum Ratings T
D
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
ID
PD
TJ, T
STG
Continuous Drain Current @TC=25°C (Note 3)
@TA=25°C (Note 1a)
Pulsed, PW ≤ 100µs (Note 1b)
Power Dissipation for Single Operation (Note 1) 52
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
–30
±25
–40
–11
–100
3.8
1.6
–55 to +175
W
°C
V
V
A
Thermal Characteristics
R
θJC
R
θJA
R
θJA
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
2011 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case (Note 1) 2.9
Thermal Resistance, Junction-to-Ambient (Note 1a) 40
Thermal Resistance, Junction-to-Ambient (Note 1b) 96
For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
certification.
°C/W
°C/W
°C/W
FDD6685 Rev D1
FDD
6685
FDD
6685
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDD6685 FDD6685 13” 12mm 2500 units
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 4)
EAS Single Pulse Drain-Source
Avalanche Energy
IAS Maximum Drain-Source
Avalanche Current
ID = –11 A 42 mJ
–11 A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1
DSS
I
Gate–Body Leakage VGS = ±25V, VDS = 0 V ±100 nA
GSS
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
–30 V
–24
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
On–State Drain Current VGS = –10 V, VDS = –5 V –20 A
D(on)
gFS Forward Transconductance VDS = –5 V, ID = –11 A 26 S
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –10 V, ID = –11 A
VGS = –4.5 V, ID = –9 A
VGS = –10 V,ID = –11 A,TJ=125°C
–1 –1.8 –3 V
5
14
21
20
20
30
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 1715 pF
iss
C
Output Capacitance 440 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 3.6
VDS = –15 V, V
f = 1.0 MHz
= 0 V,
GS
225 pF
Ω
Switching Characteristics (Note 2)
t
Turn–On Delay Time 17 31 ns
d(on)
tr Turn–On Rise Time 11 21 ns
t
Turn–Off Delay Time 43 68 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 17 24 nC
Qgs Gate–Source Charge 9 nC
Qgd Gate–Drain Charge
VDD = –15 V, ID = –1 A,
VGS = –10 V, R
VDS = –15V, ID = –11 A,
VGS = –5 V
GEN
= 6 Ω
21 34 ns
4 nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD Drain–Source Diode Forward
Trr
Qrr
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
VGS = 0 V, IS = –3.2 A (Note 2) –0.8 –1.2 V
IF = –11 A,
diF/dt = 100 A/µs
26 ns
13 nC
FDD6685 Rev D1
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