Fairchild FDD6682, FDU6682 service manual
FDD6682/FDU6682
FDD6682/FDU6682
30V N-Channel PowerTrench MOSFET
June 2004
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON) and fast switching speed.
Features
• 75 A, 30 V R
R
• Low gate charge
• Fast switching
= 6.2 mΩ @ VGS = 10 V
DS(ON)
= 8.0 mΩ @ VGS = 4.5 V
DS(ON)
Applications
• DC/DC converter
• Motor Drives
• High performance trench technology for extremely
low R
DS(ON)
D
D
G
S
D-PAK
TO-252
(TO-252)
G D S
Absolute Maximum Ratings T
I-PAK
(TO-251AA)
=25oC unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous (Note 3) 75 A
– Pulsed (Note 1a) 100
Power Dissipation for Single Operation (Note 1) 71
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +175
±20
3.8
1.6
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
2004 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case (Note 1) 2.1
Thermal Resistance, Junction-to-Ambient (Note 1a) 40
Thermal Resistance, Junction-to-Ambient (Note 1b) 96
FDD6682 FDD6682 D-PAK (TO-252) 13’’ 12mm 2500 units
FDU6682 FDU6682 I-PAK (TO-251) Tube N/A 75
FDD6682/FDU6682 Rev H(W)
°C/W
Electrical Characteristics T
FDD6682/FDU6682
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
DSS
I
AR
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 17 A 240 mJ
Drain-Source Avalanche Current 17 A
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage
V
= ±20 V, VDS = 0 V ±100
GS
30 V
20
mV/°C
µA
nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 µA
V
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 10 V, ID = 17 A
V
= 4.5 V, ID = 15 A
GS
= 10 V, ID = 17 A, TJ=125°C
V
GS
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 5 V, ID = 17 A 65 S
1 1.9 3 V
–7
5.2
6.4
8.0
6.2
11.9
mV/°C
mΩ
8
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 2400 pF
Output Capacitance 577 pF
Reverse Transfer Capacitance
V
= 15 V, V
DS
f = 1.0 MHz
GS
= 0 V,
258 pF
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4
Ω
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time 14 20 ns
Turn–On Rise Time 12 37 ns
Turn–Off Delay Time 38 64 ns
Turn–Off Fall Time
V
= 15 V, ID = 1 A,
DD
= 10 V, R
V
GS
GEN
= 6 Ω
18 32 ns
Total Gate Charge 24 31 nC
= 15V, ID = 17 A,
V
Gate–Source Charge 6.5 nC
Gate–Drain Charge
V
DS
GS
= 5 V
8.1 nC
FDD6682/FDU6682 Rev H(W)
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