Fairchild FDD6680AS service manual

FDD6680AS

FDD6680AS

30V N-Channel PowerTrench® SyncFET

General Description

The FDD6680AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R

and low gate charge. The FDD6680AS

DS(ON)

includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDD6680AS as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDD6680A in parallel with a
Schottky diode.

Applications

• DC/DC converter

• Low side notebook

G

S

TO-252

D

April 2008

™

Features

• 55 A, 30 V R
R

• Includes SyncFET Schottky body diode

• Low gate charge (21nC typical)

• High performance trench technology for extremely

DS(ON)

low R

• High power and current handling capability

.

max= 10.5 mΩ @ VGS = 10 V

DS(ON)

max= 13.0 mΩ @ VGS = 4.5 V

DS(ON)

D

G

S

tm

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

Symbol Parameter Ratings Unit

s

V

Drain-Source Voltage 30 V

DSS

V

Gate-Source Voltage

GSS

±20

V
ID Drain Current – Continuous (Note 3) 55 A
– Pulsed (Note 1a) 100
PD

Power Dissipation (Note 1) 60
(Note 1a)

TJ, T

Operating and Storage Junction Temperature Range –55 to +150

STG

(Note 1b)

3.1

1.3

W

°C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient

(Note 1) 2.1
(Note 1a) 40
(Note 1b) 96

°C/W
°C/W
°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD6680AS FDD6680AS 13’’ 16mm 2500 units

©2008 Fairchild Semiconductor Corporation

FDD6680AS Rev A1(X)

A

FDD6680

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)

W

Drain-Source Avalanche Energy

DSS

Single Pulse, V
I

=13.5A

D

IAR Drain-Source Avalanche Current 13.5 A

= 15 V,

DD

54 205 mJ

Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500

DSS

I

Gate–Body Leakage

GSS

Drain–Source Breakdown
Voltage

Breakdown Voltage Temperature
Coefficient

VGS = 0 V, ID = 1 mA 30 V
I

= 1 mA, Referenced to 25°C

D

29

mV/°C

µA

= ±20 V, VDS = 0 V

V

GS

±100

nA

On Characteristics (Note 2)

V

Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.4 3 V

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

I

On–State Drain Curre nt VGS = 10 V, VDS = 5 V 50 A

D(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

= 1 mA, Referenced to 25°C

I

D

VGS = 10 V, ID = 12.5 A
V

= 4.5 V, ID = 10 A

GS

= 10 V, ID = 12.5A, TJ= 125°C

V

GS

–3

8.6

10.5

10.3

12.5

13.0

16.0

mV/°C

mΩ

gFS Forward Transconductance VDS = 15 V, ID = 12.5 A 44 S

Dynamic Characteristics

C

Input Capacitance

iss

C

Output Capacitance

oss

C

Reverse Transfer Capacitance

rss

RG Gate Resistance

= 15 V, V

V

DS

f = 1.0 MHz

= 15 mV, f = 1.0 MHz

V

GS

= 0 V,

GS

1200 pF
350 pF

120 pF

1.6

Ω

Switching Characteristics (Note 2)

t

Turn–On Delay Time 10 20 ns

d(on)

tr Turn–On Rise Time 6 12 ns
t

Turn–Off Delay Time 28 45 ns

d(off)

tf Turn–Off Fall Time
t

Turn–On Delay Time 14 25 ns

d(on)

tr Turn–On Rise Time 13 23 ns
t

Turn–Off Delay Time 20 32 ns

d(off)

tf Turn–Off Fall Time

Q

g

(TOT)

Total Gate Charge at Vgs=10V 21 29 nC
Qg Total Gate Charge at Vgs=5V 11 15 nC
Qgs Gate–Source Charge 3 nC
Qgd Gate–Drain Charge

= 15 V, ID = 1 A,

V

DD

= 10 V, R

V

GS

= 15 V, ID = 1 A,

V

DD

= 4.5 V, R

V

GS

V

= 15 V, ID = 12.5 A

DD

GEN

GEN

= 6 Ω

12 22 ns

= 6 Ω

11 20 ns

4 nC

S

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 4.4 A
VSD

trr

Qrr

Drain–Source Diode Forward

Voltage

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

VGS = 0 V, IS = 4.4 A (Note 2)
VGS = 0 V, IS = 7 A (Note 2)
IF = 12.5A,
d

= 300 A/µs (Note 3)

iF/dt

0.5

0.7 V

0.6

17 nS

11 nC

FDD6680AS Rev A1 (X)

FDD6680AS

Electrical Characteristics T

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. Maximum current is calculated as:

where PD is maximum power dissipation at TC = 25°C and R

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

a) R

= 40°C/W when mounted on a

θJA

1in2 pad of 2 oz copper

P

D

R

DS(ON)

= 25°C unless otherwise noted

A

is at T

DS(on)

and VGS = 10V. Package current limitation is 21A

J(max)

b) R

= 96°C/W when mounted

θJA

on a minimum pad.

FDD6680AS Rev A1 (X)