Fairchild FDD6670A service manual
FDD6670A
FDD6670A
30V N-Channel PowerTrench MOSFET
July 2005
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low R
in a small package.
DS(ON)
Features
• 66 A, 30 V R
R
• Low gate charge
= 8 mΩ @ VGS = 10 V
DS(ON)
= 10 mΩ @ VGS = 4.5 V
DS(ON)
• Fast Switching
Applications
• DC/DC converter
• Motor Drives
• High performance trench technology for extremely
low R
DS(ON)
D
D
G
S
D-PAK
TO-252
(TO-252)
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
±20
Continuous Drain Current @TC=25°C (Note 3) 66 A
@TA=25°C (Note 1a) 15
Pulsed (Note 1a) 100
Power Dissipation @TC=25°C (Note 3) 63
@TA=25°C (Note 1a) 3.2
@TA=25°C (Note 1b) 1.3
Operating and Storage Junction Temperature Range –55 to +175
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case (Note 1) 2.4 °C/W
Thermal Resistance, Junction-to-Ambient (Note 1a) 40
(Note 1b)
96
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6670A FDD6670A D-PAK (TO-252) 13’’ 12mm 2500 units
2005 Fairchild Semiconductor Corp.
FDD6670A Rev E1(W)
Electrical Characteristics T
FDD6670A
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
E
AS
I
AS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 66 A 67 mJ
Drain-Source Avalanche Current 66 A
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
30 V
26
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA
mV/°C
µA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 13 A
VGS = 10 V, ID = 15 A,TJ=125°C
1 1.8 3 V
–5
6.3
7.9
9.5
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 10 V, ID = 15 A 60 S
10
13
mV/°C
8
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 1755 pF
Output Capacitance 430 pF
Reverse Transfer Capacitance
VDS = 15 V, V
f = 1.0 MHz
GS
= 0 V,
180 pF
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.3
Ω
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 11 20 ns
Turn–On Rise Time 12 21 ns
Turn–Off Delay Time 29 47 ns
Turn–Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
19 34 ns
Total Gate Charge 16 22 nC
Gate–Source Charge 4.6 nC
Gate–Drain Charge
VDS = 15V, ID = 15 A,
VGS = 5 V
6.2 nC
FDD6670A Rev. E1(W)
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