Fairchild FDD6637 service manual
S
G D
FDD6637
35V P
-
Channel PowerTrench
MOSFET
FDD6637
35V P-Channel PowerTrench MOSFET
August 2006
General Description
This P-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
• Inverter
• Power Supplies
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
Drain-Source Voltage –35 V
DSS
V
DS(Avalanche)
V
GSS
ID
PD
TJ, T
Drain-Source Avalanche Voltage (maximum) (Note 4) –40 V
Gate-Source Voltage
Operating and Storage Junction Temperature Range –55 to +150
STG
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6637 FDD6637 D-PAK (TO-252) 13’’ 12mm 2500 units
Features
• –55 A, –35 V R
R
• High performance trench technology for extremely
low R
• RoHS Compliant
DS(ON)
D
G
S
D-PAK
TO-252
(TO-252)
Continuous Drain Current @TC=25°C (Note 3) –55
@TA=25°C (Note 1a) –13
Pulsed (Note 1a) –100
Power Dissipation @TC=25°C (Note 3) 57
@TA=25°C (Note 1a) 3.1
@TA=25°C (Note 1b) 1.3
Thermal Resistance, Junction-to-Case (Note 1) 2.2
Thermal Resistance, Junction-to-Ambient (Note 1a) 40
Thermal Resistance, Junction-to-Ambient (Note 1b) 96
o
=25
C unless otherwise noted
A
= 11.6 mΩ @ VGS = –10 V
DS(ON)
= 18 mΩ @ VGS = –4.5 V
DS(ON)
±25
V
A
W
°C
°C/W
2006 Fairchild Semiconductor Corporation
FDD6637 Rev C2(W)
www.fairchildsemi.com
FDD6637
35V P
-
Channel PowerTrench
MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings
EAS Drain-Source Avalanche Energy
(Single Pulse)
IAS Drain-Source Avalanche Current –14 A
VDD = -35 V, ID= -11 A, L=1mH 61 mJ
Off Characteristics(Note 2)
BV
DSS
I
DSS
I
Gate–Body Leakage
GSS
Drain–Source Breakdown
Voltage
Zero Gate Voltage Drain Current VDS = –28 V, VGS = 0 V –1
VGS = 0 V, ID = –250 µA –35 V
VGS = ±25 V, VDS = 0 V
±100
µA
nA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
R
Static Drain–Source
DS(on)
gFS Forward Transconductance VDS =–5 V, ID = –14 A 35 S
On–Resistance
VDS = VGS, ID = –250 µA
VGS = –10 V, ID = –14 A
VGS = –4.5 V, ID = –11 A
VGS = –10 V, ID = –14 A, TJ=125°C
–1 –1.6 –3 V
9.7
14.4
14.7
11.6
18
19
mΩ
Dynamic Characteristics
C
Input Capacitance 2370 pF
iss
C
Output Capacitance 470 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance f = 1.0 MHz 3.6 Ω
VDS = –20 V, V
f = 1.0 MHz
= 0 V,
GS
250 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 18 32 ns
d(on)
tr Turn–On Rise Time 10 20 ns
t
Turn–Off Delay Time 62 100 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge, VGS = –10V 45 63 nC
Qg Total Gate Charge, VGS = –5V 25 35 nC
Qgs Gate–Source Charge 7 nC
Qgd Gate–Drain Charge
VDD = –20 V, ID = –1 A,
VGS = –10 V, R
VDS = – 20 V, ID = –14 A
GEN
= 6 Ω
36 58 ns
10 nC
FDD6637 Rev. C2(W) www.fairchildsemi.com
FDD6637
35V P
-
Channel PowerTrench
MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time 28 ns
Qrr
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and R
4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
Diode Reverse Recovery Charge
is guaranteed by design while R
θJC
a) R
θJA
1in2 pad of 2 oz copper
P
D
R
DS(ON)
VGS = 0 V, IS = –14 A (Note 2) –0.8 –1.2
IF = –14 A, diF/dt = 100 A/µs
is determined by the user's board design.
θCA
= 40°C/W when mounted on a
DS(on)
is at T
and VGS = 10V. Package current limitation is 21A
J(max)
15 nC
b) R
= 96°C/W when mounted
θJA
on a minimum pad.
V
FDD6637 Rev. C2(W) www.fairchildsemi.com
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