Fairchild FDD6635 service manual
FDD6635
35V N-Channel PowerTrench® MOSFET
FDD6635 35V N-Channel PowerTrench
February 2007
tm
General Description
This N-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
• Inverter
• Power Supplies
Features
• 59 A, 35 V R
R
• Fast Switching
• RoHS compliant
= 10 mΩ @ VGS = 10 V
DS(ON)
= 13 mΩ @ VGS = 4.5 V
DS(ON)
D
®
MOSFET
D
G
S
D-PAK
TO-252
(TO-252)
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 35 V
DSS
V
DS(Avalanche)
V
GSS
ID Continuous Drain Current @TC=25°C (Note 3) 59 A
@TA=25°C (Note 1a) 15
Pulsed (Note 1a) 100
EAS Single Pulse Avalanche Energy (Note 5) 113 mJ
PD
TJ, T
Drain-Source Avalanche Voltage (maximum) (Note 4) 40 V
Gate-Source Voltage
Power Dissipation @TC=25°C (Note 3) 55
@TA=25°C (Note 1a) 3.8
@T
Operating and Storage Junction Temperature Range –55 to +150
STG
=25°C (Note 1b) 1.6
A
±20
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1) 2.7
(Note 1a) 40
(Note 1b) 96
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6635 FDD6635 D-PAK (TO-252) 13’’ 12mm 2500 units
©2007 Fairchild Semiconductor Corporation
FDD6635 Rev. C2(W)
www.fairchildsemi.com
FDD6635 35V N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics(Note 2)
BV
Drain–Source Breakdown Voltage
DSS
ΔBVDSS
ΔT
J
I
DSS
I
Gate–Body Leakage
GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
= 0 V, ID = 250 μA
V
GS
I
= 250 μA, Referenced to 25°C
D
= 28 V, VGS = 0 V 1
DS
V
= ±20 V, VDS = 0 V
GS
35 V
32
mV/°C
μA
±100
nA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
ΔVGS(th)
ΔTJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 μA
V
DS
I
= 250 μA, Referenced to 25°C
D
VGS = 10 V, ID = 15 A
V
= 4.5 V, ID = 13 A
GS
V
= 10 V, ID = 15 A, TJ=125°C
GS
gFS Forward Transconductance VDS = 5 V, ID = 15 A 53 S
1 1.9 3 V
–5
8.2
10.2
12.4
10
13
16
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 1400 pF
iss
C
Output Capacitance 317 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4
= 20 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
137 pF
Ω
MOSFET
Switching Characteristics (Note 2)
t
Turn–On Delay Time 11 20 ns
d(on)
tr Turn–On Rise Time 6 12 ns
t
Turn–Off Delay Time 28 45 ns
d(off)
tf Turn–Off Fall Time
Q
Total Gate Charge, VGS = 10V 26 36 nC
g (TOT)
Qg Total Gate Charge, VGS = 5V 13 18 nC
Qgs Gate–Source Charge 3.9 nC
Qgd Gate–Drain Charge
= 20 V, ID = 1 A,
V
DD
V
= 10 V, R
GS
= 20 V, ID = 15 A
V
DS
GEN
= 6 Ω
14 25 ns
5.3 nC
®
FDD6635 Rev. C2(W) www.fairchildsemi.com
FDD6635 35V N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics
VSD Drain–Source Diode Forward
Voltage
trr
Qrr
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where P
4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
is guaranteed by design while R
θJC
is maximum power dissipation at TC = 25°C and R
D
R
a) R
P
D
DS(ON)
θCA
θJA
2
1in
pad of 2 oz copper
VGS = 0 V, IS = 15 A (Note 2) 0.8 1.2 V
IF = 15 A, diF/dt = 100 A/µs
26 ns
16 nC
is determined by the user's board design.
= 40°C/W when mounted on a
is at T
DS(on)
and VGS = 10V. Package current limitation is 21A
J(max)
b) R
= 96°C/W when mounted
θJA
on a minimum pad.
®
MOSFET
5. Starting T
= 25°C, L = 1mH, IAS = 15A, VDD = 35V, VGS = 10V
J
FDD6635 Rev. C2(W) www.fairchildsemi.com
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