Fairchild FDD6630A service manual
FDD6630A
FDD6630A
30V N-Channel PowerTrench MOSFET
November 2011
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
Features
• 21 A, 30 V R
R
• Low gate charge (5nC typical)
• Fast switching
= 35 mΩ @ VGS = 10 V
DS(ON)
= 50 mΩ @ VGS = 4.5 V
DS(ON)
Applications
• DC/DC converter
• Motor drives
• High performance trench technology for extremely
low R
.
DS(ON)
D
D
G
S
TO-252
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage ±20 V
GSS
ID Drain Current – Continuous (Note 3) 21 A
– Pulsed (Note 1a) 100
PD
TJ, T
STG
Power Dissipation (Note 1) 28
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +175 °C
3.2
1.3
W
Thermal Characteristics
R
Thermal Resistance, Junction-to-Case (Note 1) 4.5 °C/W
θJC
R
Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W
θJA
R
Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W
θJA
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD6630A FDD6630A 13’’ 16mm 2500 units
2011 Fairchild Semiconductor Corporation FDD6630A Rev D1
FDD6630A
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V 55 mJ
DSS
IAR Drain-Source Avalanche Current 7.6 A
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
DSS
∆BVDSS
∆TJ
I
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
23
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 20 V, VDS = 0 V 100 nA
VGS = –20 V, VDS = 0 V –100 nA
mV/°C
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.7 3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 7.6 A
VGS = 4.5 V, ID = 6.3 A
VGS = 10 V, ID = 7.6 A, TJ = 125°C
I
On–State Drain Current VGS = 10 V, VDS = 5 V 20 A
D(on)
–4
28
40
44
35
50
58
mV/°C
m Ω
gFS Forward Transconductance VDS = 5 V, ID = 7.6 A 13 S
Dynamic Characteristics
C
Input Capacitance 462 pF
iss
C
Output Capacitance 113 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = 15 V, V
f = 1.0 MHz
= 0 V,
GS
40 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 5 11 ns
d(on)
tr Turn–On Rise Time 8 17 ns
t
Turn–Off Delay Time 17 28 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 5 7 nC
Qgs Gate–Source Charge 2 nC
Qgd Gate–Drain Charge
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 7.6 A,
VGS = 5 V
13 24 ns
1.4 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.7 A
VSD Drain–Source Diode Forward
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
VGS = 0 V, IS = 2.7 A (Note 2) 0.8 1.2 V
a) R
= 40°C/W when mounted on a
θJA
1in2 pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and R
D
P
)ON(DS
R
DS(on)
is at T
and VGS = 10V. Package current limitation is 21A
J(max)
b) R
on a minimum pad.
= 96°C/W when mounted
θJA
FDD6630A Rev. D1
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