Fairchild FDD6612A, FDU6612A service manual
FDD6612A/FDU6612A
FDD6612A/FDU6612A
30V N-Channel PowerTrench MOSFET
February 2004
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low R
in a small package.
DS(ON)
Features
• 30 A, 30 V R
R
• Low gate charge
• Fast Switching
= 20 mΩ @ VGS = 10 V
DS(ON)
= 28 mΩ @ VGS = 4.5 V
DS(ON)
Applications
• DC/DC converter
• Motor Drives
• High performance trench technology for extremely
low R
DS(ON)
D
D
G
S
D-PAK
TO-252
(TO-252)
G D S
Absolute Maximum Ratings T
I-PAK
(TO-251AA)
=25oC unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Continuous Drain Current @TC=25°C (Note 3) 30 A
@TA=25°C (Note 1a) 9.5
Pulsed (Note 1a) 60
Power Dissipation @TC=25°C (Note 1) 36
@TA=25°C (Note 1a) 2.8
@TA=25°C (Note 1b) 1.3
Operating and Storage Junction Temperature Range –55 to +175
±20
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6612A FDD6612A D-PAK (TO-252) 13’’ 12mm 2500 units
FDU6612A FDU6612A I-PAK (TO-251) Tube N/A 75
2004 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case (Note 1) 3.9
Thermal Resistance, Junction-to-Ambient (Note 1a) 45
Thermal Resistance, Junction-to-Ambient (Note 1b) 96
°C/W
°C/W
°C/W
FDD6612A/FDU6612A Rev E(W)
Electrical Characteristics T
FDD6612A/FDU6612A
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
DSS
I
AR
Drain-Source Avalanche Energy Single Pulse, VDD = 27 V, ID=10 A 51 mJ
Drain-Source Avalanche Current 10 A
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V ±100
30 V
25
mV/°C
µA
nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V, ID = 9.5 A
VGS = 4.5 V, ID = 8 A
VGS = 10 V, ID = 9.5 A, TJ=125°C
1 2.0 3 V
–5.1
15
20
23
Forward Transconductance VDS = 5 V, ID = 9.5 A 28 S
20
28
33
mV/°C
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 660 pF
Output Capacitance 170 pF
Reverse Transfer Capacitance
VDS = 15 V, V
f = 1.0 MHz
GS
= 0 V,
90 pF
Gate Resistance VGS = 15 Mv, f = 1.0 MHz 2.3
Ω
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 9 18 ns
Turn–On Rise Time 5 10 ns
Turn–Off Delay Time 24 38 ns
Turn–Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
4 8 ns
Total Gate Charge 6.7 9.4 nC
Gate–Source Charge 2.1 nC
Gate–Drain Charge
VDS = 15 V, ID = 9.5 A,
VGS = 5 V
2.7 nC
FDD6612A/FDU6612A Rev. E(W)
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