Fairchild FDD6296, FDU6296 service manual
FDD6296/FDU6296
FDD6296/FDU6296
30V N-Channel Fast Switching PowerTrench MOSFET
June 2004
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
• Power management
Features
• 50A, 30 V R
R
• Low gate charge
• Fast switching
• High performance trench technology for extremely
low R
DS(ON)
= 8.8 mΩ @ VGS = 10 V
DS(ON)
= 11.3 mΩ @ VGS = 4.5 V
DS(ON)
D
D
G
S
D-PAK
TO-252
(TO-252)
G D S
Absolute Maximum Ratings T
I-PAK
(TO-251AA)
=25oC unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Continuous Drain Current @TC=25°C (Note 3) 50 A
@TA=25°C (Note 1a) 15
Pulsed (Note 1a) 100
Power Dissipation @TC=25°C (Note 3) 52
@TA=25°C (Note 1a) 3.8
@TA=25°C (Note 1b) 1.6
Operating and Storage Junction Temperature Range –55 to +175
± 20
W
°C
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
2004 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case (Note 1) 2.9
Thermal Resistance, Junction-to-Ambient (Note 1a) 40
Thermal Resistance, Junction-to-Ambient (Note 1b) 96
FDD6296 FDD6296 D-PAK (TO-252) 13’’ 12mm 2500 units
FDU6296 FDU2696 I-PAK (TO-251) Tube N/A 75
FDD6296/FDU6296 Rev C(W)
°C/W
Electrical Characteristics T
FDD6296/FDU6296
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
E
AS
I
AS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=15A 165 mJ
Drain-Source Avalanche Current 15 A
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
30 V
29
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage
VGS =± 20 V, VDS = 0 V
100
mV/°C
µA
±
nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
1 1.7 3 V
–0.5
mV/°C
Temperature Coefficient
Static Drain–Source
On–Resistance
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 13 A
VGS = 10 V, ID = 15 A, TJ=125°C
7.5
9.0
9.3
8.8
11.3
15.0
mΩ
Forward Transconductance VDS = 5 V, ID = 15 A 58 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 1440 pF
Output Capacitance 400 pF
Reverse Transfer Capacitance
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.3
VDS = 15 V, V
f = 1.0 MHz
GS
= 0 V,
140 pF
Ω
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn–On Delay Time 11 19 ns
Turn–On Rise Time 6 11 ns
Turn–Off Delay Time 29 46 ns
Turn–Off Fall Time
g
g
gs
gd
Total Gate Charge VDS = 15V, ID = 15 A, VGS = 10 V 22.5 31.5 nC
Total Gate Charge 12.2 17 nC
Gate–Source Charge 4 nC
Gate–Drain Charge
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15V, ID = 15 A,
VGS = 5 V
13 23 ns
3.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain–Source Diode Forward Current 3.2 A
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time 25 nS
Diode Reverse Recovery Charge
VGS = 0 V, IS = 3.2 A (Note 2)
IF = 15 A,
diF/dt = 100 A/µs
0.74 1.2 V
13 nC
FDD6296/FDU6296 Rev. C(W)
Loading...