FDD6030L
FDD6030L
30V N-Channel PowerTrench MOSFET
August 2003
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Motor Drives
Features
• 12 A, 30 V R
R
• Low gate charge
• Fast Switching Speed
• High performance trench technology for extremely
low R
DS(ON)
= 14.5 mΩ @ VGS = 10 V
DS(ON)
= 21 mΩ @ VGS = 4.5 V
DS(ON)
D
D
G
S
D-PAK
TO-252
(TO-252)
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Continuous Drain Current @TC=25°C (Note 3) 50 A
@TA=25°C (Note 1a) 12
Pulsed (Note 1a) 100
Power Dissipation @TC=25°C (Note 3) 56
@TA=25°C (Note 1a) 3.2
@TA=25°C (Note 1b) 1.5
Operating and Storage Junction Temperature Range –55 to +175
±20
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case (Note 1) 2.7
Thermal Resistance, Junction-to-Ambient (Note 1a) 45
(Note 1b)
96
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6030L FDD6030L D-PAK (TO-252) 13’’ 12mm 2500 units
2003 Fairchild Semiconductor Corporation
°C/W
FDD6030L Rev E
Electrical Characteristics T
FDD6030L
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
E
AS
I
AS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 12A 100 mJ
Drain-Source Avalanche Current 12 A
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 µA
V
GS
I
= 250 µA,Referenced to 25°C
D
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage
= ±20 V, VDS = 0 V ±100
V
GS
30 V
24
mV/°C
µA
nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 µA
V
DS
I
= 250 µA,Referenced to 25°C
D
VGS = 10 V, ID = 12 A
V
= 4.5 V, ID = 10 A
GS
= 10 V, ID = 12 A,TJ=125°C
V
GS
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 10 V, ID = 12 A 47 S
1 1.9 3 V
–5
7.7
9.9
11.4
14.5
21
25
mV/°C
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 1230 pF
Output Capacitance 325 pF
Reverse Transfer Capacitance
V
= 15 V, V
DS
f = 1.0 MHz
GS
= 0 V,
150 pF
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.5 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 10 19 ns
Turn–On Rise Time 7 13 ns
Turn–Off Delay Time 29 46 ns
Turn–Off Fall Time
V
= 15 V, ID = 1 A,
DD
V
= 10 V, R
GS
GEN
= 6 Ω
12 21 ns
Total Gate Charge 13 28 nC
= 15V, ID = 12 A,
V
Gate–Source Charge 3.5 nC
Gate–Drain Charge
V
DS
GS
= 5 V
5.1 nC
FDD6030L Rev E
Electrical Characteristics T
GS
F
FDD6030L
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 2.7 A
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time 24 nS
V
= 0 V, IS = 2.7 A (Note 2)
I
= 12 A, diF/dt = 100 A/µs
Diode Reverse Recovery Charge
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
a) R
= 45°C/W when mounted on a
θJA
1in2 pad of 2 oz copper
0.76 1.2 V
13 nC
b) R
= 96°C/W when mounted
θJA
on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
P
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and R
R
D
DS(ON)
Scale 1 : 1 on letter size paper
is at T
DS(on)
and VGS = 10V. Package current limitation is 21A
J(max)
FDD6030L Rev E
Typical Characteristics
3.0V
5.0V
6.0V
10.0V
DRAIN-SOURCE ON-RESISTANCE
, REVERSE DRAIN CURRENT (A)
FDD6030L
100
VGS = 10.0V
80
60
40
, DRAIN CURRENT (A)
D
I
20
0
6.0V 5.0V
0 0.5 1 1.5 2 2.5 3
, DRAIN-SOURCE VOLTAGE (V)
V
DS
4.5V
4.0V
3.5V
1.8
VGS = 3.5V
1.6
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 20 40 60 80
4.0V
4.5V
I
, DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
ID = 12A
V
= 10V
GS
0.03
0.025
0.02
0.015
, ON-RESISTANCE (OHM)
TA = 25oC
DS(ON)
0.01
R
TA = 125oC
ID = 6A
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
Figure 3. On-Resistance Variation
withTemperature
90
= 5V
V
DS
75
60
45
30
, DRAIN CURRENT (A)
D
I
15
0
1.5 2 2.5 3 3.5 4 4.5
V
, GATE TO SOURCE VOLTAGE (V)
GS
TA =-55oC
25oC
125oC
0.005
2 4 6 8 10
, GATE TO SOURCE VOLTAGE (V)
V
GS
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
1000
VGS = 0V
100
10
1
0.1
0.01
0.001
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
-55oC
, BODY DIODE FORWARD VOLTAGE (V)
V
SD
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6030L Rev. E
Typical Characteristics
1s
1ms
10
SINGLE PULSE
0.02
0.05
0.2
FDD6035AL
10
ID = 12 A
8
6
4
, GATE-SOURCE VOLTAGE (V)
2
GS
V
0
0 5 10 15 20 25
, GATE CHARGE (nC)
Q
g
VDS = 10V
15V
20V
1800
1500
C
1200
900
600
CAPACITANCE (pF)
300
C
rss
0
0 5 10 15 20 25 30
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
iss
C
oss
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
1000
100
R
DS(ON)
LIMIT
100µs
10ms
10
1
, DRAIN CURRENT (A)
I
VGS = 4.5V
SINGLE PULSE
D
R
0.1
0.01
= 96oC/W
θJA
= 25oC
T
A
0.1 1 10 100
DC
, DRAIN-SOURCE VOLTAGE (V)
V
DS
100ms
100
80
60
40
20
P(pk), PEAK TRANSIENT POWER (W)
0
0.01 0.1 1 10 100
, TIME (sec)
t
1
f = 1MHz
= 0 V
V
GS
SINGLE PULSE
= 96°C/W
R
θJA
T
= 25°C
A
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
1
0.1
0.01
0.001
D = 0.5
0.1
0.01
R
(t) = r(t) * R
θJA
R
JA
θ
P(pk)
T
- TA = P * R
J
Duty Cycle, D = t
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.0001
0.0001 0.001 0.01 0.1 1 10 100 1000
, TIME (sec)
t
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
= 96 °C/W
t
1
t
2
θJA
(t)
θJA
/ t
1
2
FDD6030L Rev E
TRADEMARKS
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CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5
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