Fairchild FDD6030L service manual
FDD6030L
FDD6030L
30V N-Channel PowerTrench MOSFET
August 2003
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Motor Drives
Features
• 12 A, 30 V R
R
• Low gate charge
• Fast Switching Speed
• High performance trench technology for extremely
low R
DS(ON)
= 14.5 mΩ @ VGS = 10 V
DS(ON)
= 21 mΩ @ VGS = 4.5 V
DS(ON)
D
D
G
S
D-PAK
TO-252
(TO-252)
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Continuous Drain Current @TC=25°C (Note 3) 50 A
@TA=25°C (Note 1a) 12
Pulsed (Note 1a) 100
Power Dissipation @TC=25°C (Note 3) 56
@TA=25°C (Note 1a) 3.2
@TA=25°C (Note 1b) 1.5
Operating and Storage Junction Temperature Range –55 to +175
±20
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case (Note 1) 2.7
Thermal Resistance, Junction-to-Ambient (Note 1a) 45
(Note 1b)
96
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6030L FDD6030L D-PAK (TO-252) 13’’ 12mm 2500 units
2003 Fairchild Semiconductor Corporation
°C/W
FDD6030L Rev E
Electrical Characteristics T
FDD6030L
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
E
AS
I
AS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 12A 100 mJ
Drain-Source Avalanche Current 12 A
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 µA
V
GS
I
= 250 µA,Referenced to 25°C
D
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage
= ±20 V, VDS = 0 V ±100
V
GS
30 V
24
mV/°C
µA
nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 µA
V
DS
I
= 250 µA,Referenced to 25°C
D
VGS = 10 V, ID = 12 A
V
= 4.5 V, ID = 10 A
GS
= 10 V, ID = 12 A,TJ=125°C
V
GS
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 10 V, ID = 12 A 47 S
1 1.9 3 V
–5
7.7
9.9
11.4
14.5
21
25
mV/°C
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 1230 pF
Output Capacitance 325 pF
Reverse Transfer Capacitance
V
= 15 V, V
DS
f = 1.0 MHz
GS
= 0 V,
150 pF
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.5 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 10 19 ns
Turn–On Rise Time 7 13 ns
Turn–Off Delay Time 29 46 ns
Turn–Off Fall Time
V
= 15 V, ID = 1 A,
DD
V
= 10 V, R
GS
GEN
= 6 Ω
12 21 ns
Total Gate Charge 13 28 nC
= 15V, ID = 12 A,
V
Gate–Source Charge 3.5 nC
Gate–Drain Charge
V
DS
GS
= 5 V
5.1 nC
FDD6030L Rev E
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