Fairchild FDD5N53, FDU5N53 service manual
tm
FDD5N53/FDU5N53
D
G
S
G
S
D
D-PAK
FDD Series
I-PAK
FDU Series
G
D
S
N-Channel MOSFET
530V, 4A, 1.5Ω
FDD5N53 / FDU5N53 N-Channel MOSFET
January 2009
TM
UniFET
Features
•R
• Low gate charge ( Typ. 11nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
, T
T
J
T
L
= 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A
DS(on)
( Typ. 5pF)
rss
o
= 25
C unless otherwise noted*
C
Symbol Parameter FDD5N53/FDU5N53 Units
Drain to Source Voltage 530 V
Gate to Source Voltage ±30 V
-Continuous (T
-Continuous (T
(T
= 25oC) 40 W
C
- Derate above 25
STG
Drain Current
Drain Current - Pulsed (Note 1) 16 A
Single Pulsed Avalanche Energy (Note 2) 256 mJ
Avalanche Current (Note 1) 4 A
Repetitive Avalanche Energy (Note 1) 4 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
= 25oC) 4
C
= 100oC) 2.4
C
o
C0.3W/
300
o
o
A
o
C
C
C
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
R
θJA
©2009 Fairchild Semiconductor Corporation
FDD5N53/FDU5N53 Rev. A
Thermal Resistance, Junction to Case 1.4
Thermal Resistance, Junction to Ambient 110
o
C/W
www.fairchildsemi.com1
FDD5N53 / FDU5N53 N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDD5N53 FDD5N53TM D-PAK 380mm 16mm 2500
FDD5N53 FDD5N53TF D-PAK 380mm 16mm 2000
FDU5N53 FDU5N53TU I-PAK - - 70
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 530 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC-0.6-V/
D
V
= 530V, V
DS
= 424V, TC = 125oC--10
V
DS
= 0V - - 1
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 2A - 1.25 1.5 Ω
Forward Transconductance VDS = 40V, ID = 2A (Note 4) -4.3-S
Input Capacitance
Output Capacitance - 66 88 pF
Reverse Transfer Capacitance - 5 8 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 400V, ID = 5A
Gate to Source Gate Charge - 3 - nC
Gate to Drain “Miller” Charge - 5 - nC
DS
V
= 10V
GS
(Note 4, 5)
- 480 640 pF
-1115nC
μA
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 22 54 ns
Turn-Off Delay Time - 28 66 ns
Turn-Off Fall Time - 20 50 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 32mH, I
3: I
≤ 4A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 4 A
Maximum Pulsed Drain to Source Diode Forward Current - - 16 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.8 - μC
= 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 250V, ID = 5A
V
DD
R
= 25Ω
G
(Note 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 4A - - 1.4 V
SD
= 5A
SD
-1336ns
- 300 - ns
FDD5N53/FDU5N53 Rev. A
2
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Typical Performance Characteristics
0.1 1 10
0.1
1
10
30
0.04
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
20
45678
0.1
1
10
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
20
036912
1.0
1.5
2.0
2.5
3.0
*Note: TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.40.81.21.6
1
10
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body D iode Forward V oltage [V]
25oC
70
0.1 1 10
0
250
500
750
1000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MH z
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V ]
30
04812
0
2
4
6
8
10
*Note: ID = 5A
VDS = 100V
V
DS
= 250V
V
DS
= 400V
V
GS
, Gate-Source Voltage [V]
Qg, Total Ga te C harge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDD5N53 / FDU5N53 N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDD5N53/FDU5N53 Rev. A
3
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