Fairchild FDD5N50U service manual

tm

FDD5N50U N-Channel MOSFET, FRFET

FDD5N50U

N-Channel MOSFET, FRFET

500V, 3A, 2.0Ω

Features

•R

• Low gate charge ( Typ. 11nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

= 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A

DS(on)

( Typ. 5pF)

rss

G

S

D

D-PAK

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.

This advance technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high effi­cient switched mode power supplies and active power factor cor­rection.

December 2007

TM

Ultra FRFET

D

G

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

, T

T

J

STG

T

L

Drain to Source Voltage 500 V

Gate to Source Voltage ±30 V

Drain Current

Drain Current - Pulsed (Note 1) 12 A

Single Pulsed Avalanche Energy (Note 2) 275 mJ

Avalanche Current (Note 1) 3 A

Repetitive Avalanche Energy (Note 1) 4 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 25oC unless otherwise noted*

C

-Continuous (T

-Continuous (T

(T

= 25oC) 40 W

C

- Derate above 25

= 25oC) 3

C

= 100oC) 1.8

C

o

C0.3W/

300

o

o

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.4

Thermal Resistance, Junction to Ambient 110

o

C/W

A

o

C

C

C

©2007 Fairchild Semiconductor Corporation
FDD5N50U Rev. A

www.fairchildsemi.com1

FDD5N50U N-Channel MOSFET, FRFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDD5N50U FDD5N50UTM D-PAK 380mm 16mm 2500

FDD5N50U FDD5N50UTF D-PAK 380mm 16mm 2000

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BVDSS Drain to Source Breakdown Voltage I
∆BV

∆T

I

DSS

I

GSS

DSS

J

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA3-5V

Static Drain to Source On Resistance VGS = 10V, ID = 1.5A - 1.65 2 Ω

Forward Transconductance VDS = 20V, ID = 1.5A (Note 4) -4-S

Dynamic Characteristics

C

C

C

Q

Q

Q

iss

oss

rss

g(tot)

gs

gd

Input Capacitance

Output Capacitance - 65 90 pF

Reverse Transfer Capacitance - 5 8 pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 3 - nC

Gate to Drain “Miller” Charge - 5 - nC

= 250µA, VGS = 0V, TJ = 25oC 500 - - V

D

I

= 250µA, Referenced to 25oC-0.6-V/

D

V

= 500V, V

DS

= 400V, TC = 125oC - - 250

V

DS

= 25V, VGS = 0V

V

DS

f = 1MHz

= 0V - - 25

GS

= 0V - - ±100 nA

DS

- 485 650 pF

-1115nC

V

= 400V, ID = 5A

DS

V

= 10V

GS

( Note 4 , 5)

µA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 21 52 ns

Turn-Off Delay Time - 27 64 ns

Turn-Off Fall Time - 20 50 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 61mH, I

≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BV

3: I

SD

4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 3 A

Maximum Pulsed Drain to Source Diode Forward Current - - 12 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 33 - nC

= 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 250V, ID = 5A

V

DD

R

= 25Ω

G

(N ote 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 3A - - 1.6 V

SD

= 5A

SD

-1438ns

-36-ns

FDD5N50U Rev. A

2

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

10

1

V

= 15.0V

GS

10.0V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

10

150oC

25oC

1

FDD5N50U N-Channel MOSFET, FRFET

,Drain Current[A]

D

I

0.1

0.02

0.1 1 10

*Notes:

1. 250

2. T

VDS,Drain-Source Voltage[V]

µs Pulse Test

= 25oC

C

30

,Drain Current[A]

D

I

*Notes:

1. V

= 20V

DS

µs Pulse Test

0.1
45678

2. 250

VGS,Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

2.6

2.2

[Ω],

DS(ON)

R

1.8

Drain-Source On-Resistance

1.4
0 6 12 18

ID, Drain Current [A]

VGS = 10V

VGS = 20V

*Note: TJ = 25oC

30

10

150oC

25oC

, Reverse Drain Current [A]

S

I

1

0.4 1.0 1.6 2.2

VSD, Body Diode Forward Voltage [V]

*Notes:

1. VGS = 0V

µs Pulse Test

2. 250

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

1000

800

600

400

Capacitances [pF]

200

0

FDD5N50U Rev. A

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

rss

= C

gd

gd

*Note:

1. V

2. f = 1MHz

C

iss

C

oss

C

rss

0.1 1 10
VDS, Drain-Source Voltage [V]

GS

= 0V

10

VDS = 100V
V

= 250V

8

V

DS

= 400V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

30

0

04812

*Note: ID = 5A

Qg, Total Gate Charge [nC]

3

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