Fairchild FDD5N50NZF service manual
FDD5N50NZF
G
S
D
G
S
D
G
S
D
D-PAK
N-Channel MOSFET
500V, 3.7A, 1.75Ω
February 2012
UniFET-II
FDD5N50NZF N-Channel MOSFET
TM
Features
•R
• Low Gate Charge ( Typ. 9nC)
•Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
•RoHS Compliant
= 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A
DS(on)
( Typ. 4pF)
rss
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
MOSFET Maximum Ratings T
Symbol Parameter FDD5N50NZF Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
, T
T
J
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 500 V
Gate to Source Voltage ±25 V
Drain Current
Drain Current - Pulsed (Note 1) 14 A
Single Pulsed Avalanche Energy (Note 2) 165 mJ
Avalanche Current (Note 1) 3.3 A
Repetitive Avalanche Energy (Note 1) 6.25 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
= 25
C unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 62.5 W
C
- Derate above 25
= 25oC) 3.7
C
= 100oC) 2.2
C
o
C0.5W/
300
A
o
C
o
C
o
C
Thermal Characteristics
Symbol Parameter
R
θJC
R
θJA
©2012 Fairchild Semiconductor Corporation
FDD5N50NZF Rev. C0
Thermal Resistance, Junction to Case 2
Thermal Resistance, Junction to Ambient 62.5
FDD5N50NZF
Units
o
C/W
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD5N50NZF FDD5N50NZFTM D-PAK 380mm 16mm 2500
FDD5N50NZF N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 500 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±25V, V
I
= 250μA, Referenced to 25oC-0.5-V/
D
V
= 500V, V
DS
= 400V, V
V
DS
= 0V - - 10
GS
= 0V,TC = 125oC - - 100
GS
= 0V - - ±10 μA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 1.85A - 1.47 1.75 Ω
= 20V, ID = 1.85A (Note 4)
Forward Transconductance
V
DS
-4.2-S
Dynamic Characteristics
C
C
C
Q
Q
Q
iss
oss
rss
g(tot)
gs
gd
Input Capacitance
Output Capacitance - 50 65 pF
Reverse Transfer Capacitance - 4 8 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 2 - nC
Gate to Drain “Miller” Charge - 4 - nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 19 50 ns
Turn-Off Delay Time - 31 70 ns
Turn-Off Fall Time - 22 55 ns
= 25V, VGS = 0V
V
DS
f = 1MHz
V
= 400V ID = 3.7A
DS
V
= 10V
GS
(Note 4, 5)
= 250V, ID = 3.7A
V
DD
V
= 10V, R
GS
(Note 4, 5)
GEN
= 25Ω
- 365 485 pF
- 9 12 nC
-1235ns
μA
o
C
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 23mH, IAS = 3.7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 3.7A, di/dt ≤ 200A/μs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDD5N50NZF Rev. C0
Maximum Continuous Drain to Source Diode Forward Current - - 3.7 A
Maximum Pulsed Drain to Source Diode Forward Current - - 14 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.15 - μC
, Starting TJ = 25°C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 3.7A - - 1.5 V
SD
= 3.7A
SD
2
-87-ns
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Typical Performance Characteristics
0.1 1 10
0.03
0.1
1
10
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
I
D
, Drain Current[A]
VDS, Drain-So u rc e Voltage[V]
25
345678
0.1
1
10
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.4 0.8 1.2 1.6
1
10
50
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0246810
1.2
1.6
2.0
2.4
2.8
3.2
3.6
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0246810
0
2
4
6
8
10
*Note: ID = 3.3A
VDS = 100V
V
DS
= 250V
V
DS
= 400V
V
GS
, Gate-Source Voltage [V]
Qg, Total Ga te C h arge [nC]
0.1 1 10 30
0
200
400
600
800
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDD5N50NZF N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDD5N50NZF Rev. C0
3
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