Fairchild FDD5N50NZF service manual

FDD5N50NZF

G

S

D

G

S

D

G

S

D

D-PAK

N-Channel MOSFET

500V, 3.7A, 1.75Ω

February 2012

UniFET-II

FDD5N50NZF N-Channel MOSFET

TM

Features

•R

• Low Gate Charge ( Typ. 9nC)

•Low C

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

• ESD Imoroved Capability

•RoHS Compliant

= 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A

DS(on)

( Typ. 4pF)

rss

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.

MOSFET Maximum Ratings T

Symbol Parameter FDD5N50NZF Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P

D

, T

T

J

STG

T

L

*Drain current limited by maximum junction temperature

Drain to Source Voltage 500 V
Gate to Source Voltage ±25 V

Drain Current
Drain Current - Pulsed (Note 1) 14 A

Single Pulsed Avalanche Energy (Note 2) 165 mJ
Avalanche Current (Note 1) 3.3 A
Repetitive Avalanche Energy (Note 1) 6.25 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

o

= 25

C unless otherwise noted*

C

-Continuous (T

-Continuous (T

(T

= 25oC) 62.5 W

C

- Derate above 25

= 25oC) 3.7

C

= 100oC) 2.2

C

o

C0.5W/

300

A

o

C

o

C

o

C

Thermal Characteristics

Symbol Parameter

R

θJC

R

θJA

©2012 Fairchild Semiconductor Corporation
FDD5N50NZF Rev. C0

Thermal Resistance, Junction to Case 2
Thermal Resistance, Junction to Ambient 62.5

FDD5N50NZF

Units

o

C/W

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD5N50NZF FDD5N50NZFTM D-PAK 380mm 16mm 2500

FDD5N50NZF N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 500 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±25V, V

I

= 250μA, Referenced to 25oC-0.5-V/

D

V

= 500V, V

DS

= 400V, V

V

DS

= 0V - - 10

GS

= 0V,TC = 125oC - - 100

GS

= 0V - - ±10 μA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 1.85A - 1.47 1.75 Ω

= 20V, ID = 1.85A (Note 4)

Forward Transconductance

V

DS

-4.2-S

Dynamic Characteristics

C
C
C
Q
Q

Q

iss
oss
rss

g(tot)
gs

gd

Input Capacitance
Output Capacitance - 50 65 pF
Reverse Transfer Capacitance - 4 8 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 2 - nC

Gate to Drain “Miller” Charge - 4 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 19 50 ns
Turn-Off Delay Time - 31 70 ns
Turn-Off Fall Time - 22 55 ns

= 25V, VGS = 0V

V

DS

f = 1MHz

V

= 400V ID = 3.7A

DS

V

= 10V

GS

(Note 4, 5)

= 250V, ID = 3.7A

V

DD

V

= 10V, R

GS

(Note 4, 5)

GEN

= 25Ω

- 365 485 pF

- 9 12 nC

-1235ns

μA

o

C

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 23mH, IAS = 3.7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 3.7A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDD5N50NZF Rev. C0

Maximum Continuous Drain to Source Diode Forward Current - - 3.7 A
Maximum Pulsed Drain to Source Diode Forward Current - - 14 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.15 - μC

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 3.7A - - 1.5 V

SD

= 3.7A

SD

2

-87-ns

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Typical Performance Characteristics

0.1 1 10

0.03

0.1

1

10

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

V

GS

= 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

I

D

, Drain Current[A]

VDS, Drain-So u rc e Voltage[V]

25

345678

0.1

1

10

-55oC

150oC

*Notes:

1. V

DS

= 20V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.4 0.8 1.2 1.6

1

10

50

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0246810

1.2

1.6

2.0

2.4

2.8

3.2

3.6

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0246810

0

2

4

6

8

10

*Note: ID = 3.3A

VDS = 100V
V

DS

= 250V

V

DS

= 400V

V

GS

, Gate-Source Voltage [V]

Qg, Total Ga te C h arge [nC]

0.1 1 10 30

0

200

400

600

800

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDD5N50NZF N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDD5N50NZF Rev. C0

3

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Typical Performance Characteristics (Continued)

-75 -50 0 50 100 150

0.90

0.95

1.00

1.05

1.10

1.15

*Notes:

1. V

GS

= 0V

2. I

D

= 250μA

BV

DSS

, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

1 10 100 1000

0.01

0.1

1

10

20

30μs

100μs

1ms

10ms

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area
is Limited by R

DS(on)

*Notes:

1. T

C

= 25oC

2. T

J

= 150oC

3. Single Pulse

DC

25 50 75 100 125 150

0

1

2

3

4

5

I

D

, Drain Current [A]

TC, Case Temperatur e [oC]

10

-5

10

-4

10

-3

10

-2

10

-1

1

0.01

0.1

1

2

0.01

0.1

0.2

0.05

0.02

*Notes:

1. Z

θJC

(t) = 2oC/W Max.

2. Duty Factor, D= t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

0.5

Single pulse

Thermal Response [Z

θJC

]

Rectangular Pulse Duration [sec]

t

1

P

DM

t

2

Figure 7. Breakdown Voltage Variation
vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

FDD5N50NZF N-Channel MOSFET

Figure 11. Transient Thermal Response Curve

FDD5N50NZF Rev. C0

4

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDD5N50NZF N-Channel MOSFET

FDD5N50NZF Rev. C0

5

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DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontrolled by pulse period

V

DD

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recoverydv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontrolled by pulse period

V

DD

LL

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recoverydv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

FDD5N50NZF N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDD5N50NZF Rev. C0

6

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Mechanical Dimensions

D-PAK

FDD5N50NZF N-Channel MOSFET

FDD5N50NZF Rev. C0

Dimensions in Millimeters

7

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.

FDD5N50NZF N-Channel MOSFET

LIFE SUPPORT POLICY

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EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

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instructions for use provided in the labeling, can be reasonably

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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDD5N50NZF Rev. C0

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be pub lished at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

8

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Rev. I61