Fairchild FDD5N50 service manual
tm
FDD5N50
N-Channel MOSFET
500V, 4A, 1.4Ω
FDD5N50 N-Channel MOSFET
December 2007
TM
UniFET
Features
•R
• Low gate charge ( Typ. 11nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
, T
T
J
T
L
= 1.15Ω ( Typ.)@ VGS = 10V, ID = 2A
DS(on)
( Typ. 5pF)
rss
G
S
Symbol Parameter Ratings Units
Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 16 A
Single Pulsed Avalanche Energy (Note 2) 256 mJ
Avalanche Current (Note 1) 4 A
Repetitive Avalanche Energy (Note 1) 4 mJ
Power Dissipation
STG
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
D-PAK
D
o
= 25
C unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 40 W
C
- Derate above 25
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
D
G
S
= 25oC) 4
C
= 100oC) 2.4
C
o
C0.3W/
300
o
o
A
o
C
C
C
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
R
θJA
©2007 Fairchild Semiconductor Corporation
FDD5N50 Rev. A
Thermal Resistance, Junction to Case 1.4
Thermal Resistance, Junction to Ambient 110
o
C/W
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FDD5N50 N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDD5N50 FDD5N50TM D-PAK 380mm 16mm 2500
FDD5N50 FDD5N50TF D-PAK 380mm 16mm 2000
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250µA, Referenced to 25oC-0.6-V/
D
V
= 500V, V
DS
= 400V, TC = 125oC--10
V
DS
= 0V - - 1
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 2A - 1.15 1.4 Ω
Forward Transconductance VDS = 20V, ID = 2A (Note 4) -4.3-S
Input Capacitance
Output Capacitance - 66 88 pF
Reverse Transfer Capacitance - 5 8 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 400V, ID = 5A
Gate to Source Gate Charge - 3 - nC
Gate to Drain “Miller” Charge - 5 - nC
DS
V
= 10V
GS
(Note 4, 5)
- 480 640 pF
-1115nC
µA
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 22 54 ns
Turn-Off Delay Time - 28 66 ns
Turn-Off Fall Time - 20 50 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 32mH, I
≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BV
3: I
SD
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 4 A
Maximum Pulsed Drain to Source Diode Forward Current - - 16 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.8 - µC
= 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 250V, ID = 5A
V
DD
R
= 25Ω
G
(Note 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/µs (Note 4)
F
= 4A - - 1.4 V
SD
= 5A
SD
-1336ns
- 300 - ns
FDD5N50 Rev. A
2
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Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
20
V
= 15.0V
GS
10.0V
10
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
1
,Drain Current[A]
D
I
0.1
0.04
0.1 1 10
*Notes:
1. 250
2. T
µs Pulse Test
= 25oC
C
30
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
3.0
20
10
150oC
25oC
1
,Drain Current[A]
D
I
0.1
45678
-55oC
*Notes:
1. V
2. 250
= 20V
DS
µs Pulse Test
VGS,Gate-Source Voltage[V]
70
FDD5N50 N-Channel MOSFET
2.5
150oC
[Ω],
2.0
DS(ON)
R
1.5
VGS = 10V
VGS = 20V
Drain-Source On-Resistance
1.0
036912
*Note: TJ = 25oC
ID, Drain Current [A]
10
25oC
, Reverse Drain Current [A]
S
I
1
0.40.81.21.6
*Notes:
1. VGS = 0V
µs Pulse Test
2. 250
VSD, Body D iode Forward V oltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
1000
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
= C
rss
750
500
Capacitances [pF]
250
0
0.1 1 10
VDS, Drain-Source Voltage [V ]
gd
gd
*Note:
1. V
= 0V
GS
2. f = 1MH z
C
iss
C
oss
C
rss
30
10
VDS = 100V
V
= 250V
DS
= 400V
V
8
DS
6
4
, Gate-Source Voltage [V]
GS
V
2
0
04812
*Note: ID = 5A
Qg, Total Ga te C harge [nC]
FDD5N50 Rev. A
3
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