Fairchild FDD5690 service manual
FDD5690
60V N-Channel PowerTrench
®
MOSFET
FDD5690
December 2002
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications.
DS(ON)
Features
30 A, 60 V. R
R
DS(ON)
DS(ON)
= 0.027Ω @ V
= 0.032 Ω @ V
= 10 V
GS
= 6 V.
GS
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
D
D
G
G
S
TO-252
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 60 V
Gate-Source Voltage
Maximum Drain Cu rrent -C on tinuo u s
(Note 1 a )
Maximum Drain Current -Pulsed 100
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
Operating and Storage Junction Temperature Range -55 to +150
TC=25oC unless otherwise noted
(Note 1)
(Note 1)
TA = 25oC
(Note 1a )
(Note 1b )
S
±20
30
9
50
3.2
1.3
V
A
W
°C
Thermal Characteristics
R
JC
θ
R
JA
θ
Therm al R es is tan ce , J unc tion -to- C as e
Thermal Resistance, Junction-to- Ambient
(Note 1 b )
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD5690 FDD5690 13’’ 16mm 2500
2002 Fairchild Semiconductor Corporation
(Note 1)
(Note 1a)
2.5
40
96
°
C/W
°C/W
°C/W
FDD5690, Rev. C
FDD5690
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
W
DSS
I
AR
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSSF
I
GSSR
Single Pulse Drain-Source
VDD = 30 V, ID = 30 A 90 mJ
Avalanche Energy
Maximum Drain-Source Avalanche Current 30 A
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 µA
V
GS
= 250µA, Referenced to 25°C
I
D
60 V
57
mV/°C
Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1
Gate-Body Leakage Current,
VGS = 20V, VDS = 0 V 100 nA
Forward
Gate-Body Leakage Current,
VGS = -20 V, VDS = 0 V -100 nA
Reverse
µA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
= VGS, ID = 250 µA
V
DS
= 250 µA,Referenced to 25°C
I
D
VGS = 10 V, ID = 9 A
V
= 10 V, ID = 9 A, TJ = 125°C
GS
V
= 6 V, ID = 8 A
GS
On-State Drain Current VGS = 10 V, VDS = 5 V 25 A
Forward Transconductance VDS = 5 V, ID = 9 A 24 S
22.54 V
-6
0.023
0.032
0.026
0.027
0.048
0.032
mV/°C
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1110 pF
Output Capacitance 150 pF
Reverse Transfer Capacitance
V
= 25 V, VGS = 0 V
DS
f = 1.0 MHz
75 pF
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time 10 18 ns
Turn-On Rise Time 9 18 ns
= 30 V, ID = 1 A
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Turn-Off Delay Time 24 39 ns
Turn-Off Fall Time
Total Gate Charge 23 32 nC
Gate-Source Charge 4 nC
V
= 30 V, ID = 9 A
DS
= 10 V,
V
GS
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
θJA
R
θJC
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Di ode Forward Current 2.3 A
Drain-Source Diode Forward
VGS = 0 V, IS = 2.3 A (Note 2) 0.75 1.2 V
Voltage
is guaranteed by design while R
is determined by the user's board design.
θCA
a) R
= 40oC/W when mounted
θJA
on a 1in2 pad of 2oz copper.
b) R
= 96oC/W on a minimum
θJA
mounting pad.
10 18 ns
6.8 nC
FDD5690, Rev. C
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