Fairchild FDD5670 service manual
FDD5670
60V N-Channel PowerTrench
®®®®
MOSFET
FDD5670
November 2011
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
extremely low R
DS( ON) and fast switching speed.
in a small package.
DS(ON)
Features
• 52 A, 60 V R
R
• Low gate charge
• Fast switching
= 15 mΩ @ VGS = 10 V
DS(ON)
= 18 mΩ @ VGS = 6 V
DS(ON)
Applications
• DC/DC converter
• Motor drives
• High performance trench technology for extremely
low R
DS(ON)
D
D
G
S
G
TO-252
S
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 60 V
Gate-Source Voltage
±20
Drain Current – Continuous (Note 3) 52 A
– Pulsed (Note 1a) 150
Power Dissipation for Single Operation (Note 1) 83
(Note 1a)
(Note 1b)
3.8
1.6
Operating and Storage Junction Temperature Range -55 to +175
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case (Note 1) 1.8
Thermal Resistance, Junction-to-Ambient (Note 1a) 40
Thermal Resistance, Junction-to-Ambient (Note 1b) 96
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD5670 FDD5670 13’’ 16mm 2500 units
©2011 Fairchild Semiconductor Corporati on
°C/W
°C/W
°C/W
FDD5670 Rev B2
FDD5670
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
DSS
I
AR
Drain-Source Avalanche Energy Single Pulse, VDD = 20 V, ID = 10A 360 mJ
Drain-Source Avalanche Current 10 A
Off Characteristics
BV
DSS
ΔBVDSS
===ΔT
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 μA
V
GS
I
= 250 μA, Referenced to 25°C
D
Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1
V
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
= 20 V, VDS = 0 V 100 nA
GS
V
= –20 V, VDS = 0 V –100 nA
GS
60 V
53
mV/°C
On Characteristics (Note 2)
V
GS(th)
ΔVGS(th)
===ΔT
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 μA
V
DS
I
= 250 μA, Referenced to 25°C
D
VGS = 10 V, ID = 10 A
V
= 6 V, ID = 9 A
GS
= 10 V, ID = 10 A, TJ = 125°C
V
GS
On–State Drain Current VGS = 10 V, VDS = 5 V 60 A
Forward Transconductance VDS = 5 V, ID = 10 A 27 S
22.54 V
–6
12
14
19
15
18
26
mV/°C
mΩ
Dynamic Characteristics
V
C
iss
C
oss
C
rss
Input Capacitance 2739 pF
Output Capacitance 441 pF
Reverse Transfer Capacitance
= 15 V, V
DS
f = 1.0 MHz
GS
= 0 V,
182 pF
Switching Characteristics (Note 2)
V
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 20 32 ns
Turn–On Rise Time 12 24 ns
Turn–Off Delay Time 60 95 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 52 73 nC
Gate–Source Charge 10 nC
Gate–Drain Charge
= 30 V, ID = 1 A,
DD
= 10 V, R
V
GS
= 15 V, ID = 10 A,
V
DS
V
= 10 V
GS
GEN
= 6 Ω
24 38 ns
13 nC
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Notes:
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
1. R
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
VGS = 0 V, IS = 3.5 A (Note 2) 0.74 1.2 V
is determined by the user's board design.
θCA
μA
a) R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
P
D
3. Maximum current is calculated as:
where P
is maximum power dissipation at TC = 25°C and R
D
R
)ON(DS
= 40°C/W when mounted on a
θJA
2
1in
pad of 2 oz copper
is at T
DS(on)
J(max)
b) R
θJA
on a minimum pad.
and VGS = 10V. Package current limitation is 21A
= 96°C/W when mounted
FDD5670 Rev. B2
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