Fairchild FDD5612 service manual
FDD5612
60V N-Channel PowerTrench
MOSFET
FDD5612
March 2001
General Description
This N-Channel MOSFET has been designed
specifically to i mprove the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM c ontrollers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
specificati ons. The result is a MOSFET that is
R
DS(ON)
easy and safer to drive (even at very high frequenc ies),
and DC/DC power supply designs with higher overall
efficiency.
Features
• 18 A, 60 V. R
R
• Optimized for use in high frequency DC/DC
converters.
• Low gade charge.
• Very fast switching.
= 55 mΩ @ VGS = 10 V
DS(ON)
= 64 mΩ @ VGS = 6 V
DS(ON)
D
D
G
S
TO-252
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 60 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1) 18 A
Drain Current – Pulsed 100
PD
TJ, T
STG
Maximum Power Dissipation (Note 1) 42
(Note 1a)
Operating and Storage Junction Temperature Range –55 to +175
(Note 1a)
(Note 1b)
±20
5.4
3.8
1.6
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1) 3.5
(Note 1a) 40
(Note 1b)
96
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD5612 FDD5612 13’’ 16mm 2500 units
2001 Fairchild Semiconductor Corporation
°C/W
°C/W
FDD5612 REV. C1(W)
FDD5612
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
W
Single Pulse Drain-Source
DSS
VDD = 30 V, ID = 5.4 A 90 mJ
Avalanche Energy
IAR Maximum Drain-Source Avalanche
5.4 A
Current
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
60 V
62
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 20 A
D(on)
V
= VGS, ID = 250 µA
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 5.4 A
= 6 V, ID = 5 A
V
GS
= 10 V, ID = 5.4 A, TJ = 125°C
V
GS
1 2.4 3 V
–6
36
42
64
55
64
103
mV/°C
mΩ
gFS Forward Transconductance VDS = 5 V, ID = 5.4 A 15 S
Dynamic Characteristics
C
Input Capacitance 660 pF
iss
C
Output Capacitance 79 pF
oss
C
Reverse Transfer Capacitance
rss
V
= 30 V, V
DS
f = 1.0 MHz
= 0 V,
GS
36 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 8 16 ns
d(on)
tr Turn–On Rise Time 4 8 ns
t
Turn–Off Delay Time 24 38 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 7.5 11 nC
Qgs Gate–Source Charge 2.5 nC
Qgd Gate–Drain Charge
V
= 30 V, ID = 1 A,
DD
V
= 10 V, R
GS
V
= 30 V, ID = 5.4 A,
DS
= 10 V
V
GS
GEN
= 6 Ω
4 8 ns
3 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.7 A
VSD
Notes:
1. R
θJA
R
θJA is the guaranteed design while RθJA is determined by the user’s design. RθJA has been used to determine some of the maximum ratings.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
a) R
= 40oC/W when
θJA
mounted on a 1in2 pad of
2oz copper.
V
= 0 V, IS = 2.7 A (Note 2) 0.8 1.2 V
GS
b) R
= 96oC/W when
θJA
mounted on a 0.076 in2
pad of 2oz copper.
FDD5612 Rev C1(W)
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