Fairchild FDD5353 service manual

tm

FDD5353

(

)

N-Channel Power Trench® MOSFET

60V, 50A, 12.3mΩ

Features

 Max r
 Max r
 100% UIL Tested
 RoHS Compliant

= 12.3mΩ at VGS = 10V, ID = 10.7A

DS(on)

= 15.4mΩ at VGS = 4.5V, ID = 9.5A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Application

 Inverter
 Synchronous rectifier
 Primary switch

FDD5353 N-Channel Power Trench

March 2008

®

process that has

®

MOSFET

D

G

D

S

D-PAK

TO-252

G

TO-252

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 50

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 253 mJ
Power Dissipation TC = 25°C 69
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 1.8
Thermal Resistance, Junction to Ambient (Note 1a) 40

= 25°C unless otherwise noted

C

= 25°C 54

C

= 25°C (Note 1a) 11.5

A

= 25°C (Note 1a) 3.1

A

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDD5353 FDD5353 D-PAK (TO-252) 13’’ 12mm 2500 units

©2008 Fairchild Semiconductor Corporation
FDD5353 Rev.C

1

www.fairchildsemi.com

FDD5353 N-Channel Power Trench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current VGS = ±20V, V

ID = 250µA, referenced to 25°C 77 mV/°C

= 0V, VDS = 48V, 1 µA

GS

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 1.8 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 5V, ID = 10.7A 41 S

ID = 250µA, referenced to 25°C -8 mV/°C
VGS = 10V, ID = 10.7A 10.1 12.3

VGS = 10V , ID = 10.7A, TJ = 125°C 16.7 20.3

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 215 285 pF
Reverse Transfer Capacitance 120 180 pF

VDS = 30V, VGS = 0V,
f = 1MHz

2420 3215 pF

Gate Resistance f = 1MHz 1.7 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 6 11 ns
Turn-Off Delay Time 36 58 ns

VDD = 30V, ID = 10.7A,
VGS = 10V, R

GEN

= 6Ω

11 20 ns

Fall Time 4 10 ns
Total Gate Charge VGS = 0V to 10V
Total Gate Charge VGS = 0V to 4.5V 23 32 nC
Gate to Source Charge 7 nC

VDD = 30V,
ID = 10.7A

46 65 nC

Gate to Drain “Miller” Charge 9 nC

mΩVGS = 4.5V, ID = 9.5A 12.1 15.4

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:
1: R

θJA

R

θJC

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T

©2008 Fairchild Semiconductor Corporation
FDD5353 Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 21 34 nC

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

is guaranteed by design while R

= 25°C, L = 3mH, IAS = 13A, VDD = 60V, VGS = 10V.

J

is determined by the user’s board design.

θJA

V
V

IF = 10.7A, di/dt = 100A/µs

a)

40°C/W when mounted on a

2

pad of 2 oz copper

1 in

= 0V, IS = 10.7A (Note 2) 0.8 1.3

GS

= 0V, IS = 2.6A (Note 2) 0.7 1.2

GS

28 45 ns

b)

96°C/W when mounted
on a minimum pad.

2

V

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