Fairchild FDD4243 service manual

FDD4243

(

)

40V P-Channel PowerTrench® MOSFET

-40V, -14A, 44mΩ
Features

 Max r

 Max r

 High performance trench technology for extremely low r

 RoHS Compliant

= 44mΩ at VGS = -10V, ID = -6.7A

DS(on)

= 64mΩ at VGS = -4.5V, ID = -5.5A

DS(on)

DS(on)

General Description

This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
deliver low
superior performance benefit in the applications.

r

DS(on)

Application

November 2007

®

and optimized Bvdss capability to offer

technology to

FDD4243 40V P-Channel PowerTrench

 Inverter

 Power Supplies

G

D

G

S

S

D-PAK

TO-252

TO-252

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage -40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25°C -14

-Continuous (Silicon limited) T

-Continuous T

-Pulsed -60

Single Pulse Avalanche Energy (Note 3) 84 mJ

Power Dissipation TC= 25°C 42

Power Dissipation (Note 1a) 3

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

C

C

A

= 25°C (Note 1) -24

= 25°C (Note 1a) -6.7

D

Thermal Characteristics

®

MOSFET

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 3.0

Thermal Resistance, Junction to Ambient (Note 1a ) 40

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD4243 FDD4243 D-PAK(TO-252) 13’’ 12mm 2500 units

©2007 Fairchild Semiconductor Corporation
FDD4243 Rev.C1

°C/W

1

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FDD4243 40V P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -40 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V, V

ID = -250µA, referenced to 25°C -32 mV/°C

VDS = -32V, -1

V

= 0V TJ = 125°C -100

GS

= 0V ±100 nA

GS

Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1.4 -1.6 -3.0 V

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = -5V, ID = -6.7A 16 S

ID = -250µA, referenced to 25°C 4.7 mV/°C

VGS = -10V, ID = -6.7A 36 44

VGS = -10V, ID = -6.7A, TJ = 125°C 53 69

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 165 220 pF

Reverse Transfer Capacitance 90 135 pF

VDS = -20V, VGS = 0V,
f = 1MHz

116 5 1550 pF

Gate Resistance f = 1MHz 4 Ω

µA

mΩVGS = -4.5V, ID = -5.5A 48 64

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 15 26 ns

Turn-Off Delay Time 22 35 ns

VDD = -20V, ID = -6.7A
VGS = -10V, R

GEN

= 6Ω

6 12 ns

Fall Time 7 14 ns

Total Gate Charge at 10V

Gate to Source Gate Charge 3.4 nC

VDD = -20V, ID = -6.7A
V

= -10V

GS

21 29 nC

Gate to Drain “Miller” Charge 4 nC

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

guaranteed by design while R

a. 40°C/W when mounted on a 1 in

b. 96°C/W when mounted on a minimum pad.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 30 44 nC

is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

= 25°C, L = 3mH, IAS = 7.5A, VDD = 40V, VGS = 10V.

J

is determined by the user’s board design.

θJC

2

p ad o f 2 o z co p p e r

= 0V, IS = -6.7A (Note 2) 0.86 1.2 V

GS

IF = -6.7A, di/dt = 100A/µs

29 43 ns

θJC

is

FDD4243 Rev.C1

2

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FDD4243 40V P-Channel PowerTrench

Typical Characteristics T

60

50

VGS = -10V

VGS = - 6V

40

VGS = -5V

30

20

, DRAIN CURRENT (A)

D

-I

10

0

012345

1.8

1.6

1.4

1.2

1.0

NORMALIZED

0.8

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

ID = -6.7A
V

= -10V

GS

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

VGS = -4.5V

VGS = -4V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

VGS = - 3.0V

3.5

VGS = -3.0V

3.0

2.5

2.0

1.5

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5
0 102030405060

V

= -4V

GS

V

= -4.5V

GS

V

= -5V

GS

V

= -6V

GS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

-ID, DRAIN CURRENT(A)

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

, DRAIN TO

r

DS(on)

120

ID = -6.7A

100

(mΩ)

80

60

40

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

TJ = 125oC

o

T

= 25

C

J

V

= -10V

GS

®

MOSFET

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

D

-I

FDD4243 Rev.C1

0.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

60

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX

50

40

30

20

TJ = 150oC

TJ = 25oC

TJ = -55oC

10

0

123456

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

SOURCE ON-RESISTANCE

20

2345678910

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

30

V

= 0V

GS

10

TJ = 150oC

1

, REVERSE DRAIN CURRENT (A)

S

-I

0.1

0.40.60.81.01.2

-V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

3

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FDD4243 40V P-Channel PowerTrench

Typical Characteristics T

10

ID = -6.7A

8

6

4

2

, GATE TO SOURCE VOLTAGE(V)

GS

0

-V

0 4 8 12162024

Figure 7.

Gate Charge Characteristics Figure 8.

10

8

6

4

2

, AVALANCHE CURRENT(A)

AS

-I

1

0.01 0.1 1 10

Figure 9.

Switching Capability

100

10

1

, DRAIN CURRENT (A)

D

-I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

0.1

0.5

110100

-VDS, DRAIN to SOURCE VOLTAGE (V)

F ig u re 1 1. F or w ar d B ia s Sa f e

V

= -10V

DD

V

Qg, GATE CHARGE(nC)

TJ = 125oC

tAV, TIME IN AVALANCHE(ms)

U n c l a m p e d I n d u c t i v e

SINGLE PULSE
T

= MAX RATED

J

T

= 25OC

DS(on)

C

Operating Area

= 25°C unless otherwise noted

J

V

= -20V

DD

DD

= -30V

TJ = 25oC

30

100us

1ms

10ms

100ms

3000

1000

C

iss

C

CAPACITANCE (pF)

100

f = 1MHz

= 0V

V

GS

oss

C

rss

50

0.1 1 10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

C a p a c i t a n c e v s D r a i n

to Source Voltage

25

V

20

GS

= -10V

15

10

, DRAIN CURRENT (A)

D

5

-I

0

25 50 75 100 125 150

Limited by Package

R

= 3.0oC/W

θJC

V

= -4.5V

GS

TC, CASE TEMPERATURE (oC)

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

Current vs Case Temperature

10000

FOR TEMPERATURES

VGS = -10V

1000

o

ABOVE 25

CURRENT AS FOLLOWS:

I = I

25

C DERATE PEAK

150 TC–

----------------------

125

100

), PEAK TRANSIENT POWER (W)

PK

P(

SINGLE PULSE

30

-5

10

Figure 12.

-4

-3

-2

10

10

t, PULSE WIDTH (s)

10

-1

10

S i n g l e P u l s e M a x i m u m

Power Dissipation

TC = 25oC

0

10

30

®

MOSFET

1

10

FDD4243 Rev.C1

4

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FDD4243 40V P-Channel PowerTrench

Typical Characteristics T

2

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-4

10

NORMALIZED THERMAL

θJC

0.1

IMPEDANCE, Z

0.01

0.003

1

-5

10

= 25°C unless otherwise noted

J

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-3

10

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

P

θJC

DM

t

1

t

2

1/t2

x R

+ T

θJC

C

0

10

1

10

®

MOSFET

FDD4243 Rev.C1

5

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FDD4243 40V P-Channel PowerTrench

®

MOSFET

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use

2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to
result in a significant injury to the user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild Semiconductor. The datasheet is printed for reference infor­mation only.

FDD4243 Rev.C1

www.fairchildsemi.com6

Rev. I31