Fairchild FDD4243 service manual

FDD4243

(

)

40V P-Channel PowerTrench® MOSFET

-40V, -14A, 44mΩ
Features

 Max r

 Max r

 High performance trench technology for extremely low r

 RoHS Compliant

= 44mΩ at VGS = -10V, ID = -6.7A

DS(on)

= 64mΩ at VGS = -4.5V, ID = -5.5A

DS(on)

DS(on)

General Description

This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
deliver low
superior performance benefit in the applications.

r

DS(on)

Application

November 2007

®

and optimized Bvdss capability to offer

technology to

FDD4243 40V P-Channel PowerTrench

 Inverter

 Power Supplies

G

D

G

S

S

D-PAK

TO-252

TO-252

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage -40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25°C -14

-Continuous (Silicon limited) T

-Continuous T

-Pulsed -60

Single Pulse Avalanche Energy (Note 3) 84 mJ

Power Dissipation TC= 25°C 42

Power Dissipation (Note 1a) 3

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

C

C

A

= 25°C (Note 1) -24

= 25°C (Note 1a) -6.7

D

Thermal Characteristics

®

MOSFET

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 3.0

Thermal Resistance, Junction to Ambient (Note 1a ) 40

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD4243 FDD4243 D-PAK(TO-252) 13’’ 12mm 2500 units

©2007 Fairchild Semiconductor Corporation
FDD4243 Rev.C1

°C/W

1

www.fairchildsemi.com

FDD4243 40V P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -40 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V, V

ID = -250µA, referenced to 25°C -32 mV/°C

VDS = -32V, -1

V

= 0V TJ = 125°C -100

GS

= 0V ±100 nA

GS

Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1.4 -1.6 -3.0 V

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = -5V, ID = -6.7A 16 S

ID = -250µA, referenced to 25°C 4.7 mV/°C

VGS = -10V, ID = -6.7A 36 44

VGS = -10V, ID = -6.7A, TJ = 125°C 53 69

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 165 220 pF

Reverse Transfer Capacitance 90 135 pF

VDS = -20V, VGS = 0V,
f = 1MHz

116 5 1550 pF

Gate Resistance f = 1MHz 4 Ω

µA

mΩVGS = -4.5V, ID = -5.5A 48 64

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 15 26 ns

Turn-Off Delay Time 22 35 ns

VDD = -20V, ID = -6.7A
VGS = -10V, R

GEN

= 6Ω

6 12 ns

Fall Time 7 14 ns

Total Gate Charge at 10V

Gate to Source Gate Charge 3.4 nC

VDD = -20V, ID = -6.7A
V

= -10V

GS

21 29 nC

Gate to Drain “Miller” Charge 4 nC

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

guaranteed by design while R

a. 40°C/W when mounted on a 1 in

b. 96°C/W when mounted on a minimum pad.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 30 44 nC

is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

= 25°C, L = 3mH, IAS = 7.5A, VDD = 40V, VGS = 10V.

J

is determined by the user’s board design.

θJC

2

p ad o f 2 o z co p p e r

= 0V, IS = -6.7A (Note 2) 0.86 1.2 V

GS

IF = -6.7A, di/dt = 100A/µs

29 43 ns

θJC

is

FDD4243 Rev.C1

2

www.fairchildsemi.com