Fairchild FDD3N50NZ service manual
FDD3N50NZ N-Channel MOSFET
FDD3N50NZ
N-Channel MOSFET
500V, 2.5A, 2.5
Features
•R
• Low Gate Charge ( Typ. 6.2nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
= 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A
DS(on)
( Typ. 2.5pF)
rss
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
November 2011
TM
UniFET-II
G
S
D-PAK
MOSFET Maximum Ratings T
Symbol Parameter FDD3N50NZ Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P
D
TJ, T
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 500 V
Gate to Source Voltage ±25 V
Drain Current
Drain Current - Pulsed (Note 1) 10 A
Single Pulsed Avalanche Energy (Note 2) 114 mJ
Avalanche Current (Note 1) 2.5 A
Repetitive Avalanche Energy (Note 1) 4 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
D
= 25oC unless otherwise noted*
C
-Continuous (TC = 25oC) 2.5
-Continuous (TC = 100oC) 1.5
(TC = 25oC) 40 W
- Derate above 25oC 0.3 W/oC
300
o
o
Thermal Characteristics
Symbol Parameter
R
JC
R
JA
Thermal Resistance, Junction to Case 3.1
Thermal Resistance, Junction to Ambient 90
Ratings
Units
o
C/W
A
C
C
©2011 Fairchild Semiconductor Corporation
FDD3N50NZ Rev. C0
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD3N50NZ FDD3N50NZTM D-PAK 380mm 16mm 2500
FDD3N50NZ N-Channel MOSFET
Electrical Characteristics
TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
BV
T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TC = 25oC 500 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±25V, V
ID = 250A, Referenced to 25oC - 0.5 - V/oC
VDS = 500V, V
VDS = 400V, V
= 0V - - 1
GS
= 0V,TC = 125oC- - 10
GS
= 0V - - ±10 A
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250A 3.0 - 5.0 V
Static Drain to Source On Resistance VGS = 10V, ID = 1.25A - 2.1 2.5
= 20V, ID = 1.25A (Note 4)
Forward Transconductance
V
DS
- 1.9 - S
Dynamic Characteristics
C
C
C
Q
Q
Q
iss
oss
rss
g(tot)
gs
gd
Input Capacitance
Output Capacitance - 30 45 pF
Reverse Transfer Capacitance - 2.5 5 pF
VDS = 25V, VGS = 0V
f = 1MHz
Total Gate Charge at 10V
Gate to Source Gate Charge - 1.4 - nC
Gate to Drain “Miller” Charge - 3.1 - nC
VDS = 400V ID = 2.5A
VGS = 10V
(Note 4, 5)
- 210 280 pF
- 6.2 8 nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 15 40 ns
Turn-Off Delay Time - 26 60 ns
Turn-Off Fall Time - 17 45 ns
VDD = 250V, ID = 2.5A
VGS = 10V, R
(Note 4, 5)
GEN
= 25
-1030ns
A
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 36.6mH, I
2.5A, di/dt 200A/s, VDD BV
3. I
SD
4. Pulse Test: Pulse width 300s, Dual Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDD3N50NZ Rev. C0
Maximum Continuous Drain to Source Diode Forward Current - - 2.5 A
Maximum Pulsed Drain to Source Diode Forward Current - - 10 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.52 - C
= 2.5A, VDD = 50V, RG = 25, Starting TJ = 25C
AS
, Starting TJ = 25C
DSS
= 0V, I
GS
VGS = 0V, I
= 2.5A - - 1.4 V
SD
= 2.5A
SD
dIF/dt = 100A/s (Note 4)
2
- 190 - ns
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Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDD3N50NZ N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDD3N50NZ Rev. C0
3
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