Fairchild FDD390N15ALZ service manual

FDD390N15ALZ

D-PAK

G

S

D

G

S

D

G

S

D

N-Channel PowerTrench® MOSFET

150V, 26A, 42mΩ

FDD390N15ALZ N-Channel PowerTrench

March 2012

Features

•R

•R

• Fast Switching Speed

• Low gate charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

•RoHS Compliant

= 33.4mΩ ( Typ.) @ VGS = 10V, ID = 26A

DS(on)

= 42.2mΩ ( Typ.) @ VGS = 4.5V, ID = 20A

DS(on)

R

DS(on)

MOSFET Maximum Ratings T

Symbol Parameter Rating Units

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 13 V/ns
P

D

, T

T

J

STG

T

L

Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V

Drain Current
Drain Current - Pulsed (Note 1) 104 A

Single Pulsed Avalanche Energy (Note 2) 96 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

o

= 25

C unless otherwise noted*

C

- Continuous (T

- Continuous (T

(T

= 25oC) 63 W

C

- Derate above 25

Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC Converters

• Synchronous Rectification for Telecommunication PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplie s

= 25oC) 26

C

= 100oC) 17

C

o

C0.5W/

300

o

o

®

MOSFET

A

o

C

C
C

Thermal Characteristics

Symbol Parameter

R

θJC

R

θJA

©2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev.C1

Thermal Resistance, Junction to Case - 2.0
Thermal Resistance, Junction to Ambient - 87

Min. Max.

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Units

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD390N15ALZ FDD390N15ALZ D-PAK 380mm 16mm 2500

FDD390N15ALZ N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 150 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250μA, Referenced to 25oC - 0.15 - V/oC

D

V

= 120V, V

DS

= 120V, TC = 125oC - - 500

V

DS

= 0V - - 1

GS

= 0V - - ±10 μA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA1.4-2.8V

V

= 10V, ID = 26A - 33.4 42 mΩ

Static Drain to Source On Resistance
Forward Transconductance

GS

= 4.5V, ID = 20A - 42.2 64 mΩ

V

GS

= 10V, ID = 26A

V

DS

-50-S

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss(er)

Q

g(tot)

Q

g(tot)

Q

gs

Q

gd

Input Capacitance
Output Capacitance - 93 120 pF
Reverse Transfer Capacitance - 4 6 pF

= 75V, VGS = 0V

V

DS

f = 1MHz

Energy Related Output Capacitance VDS = 75V, VGS = 0V - 165 - pF
Total Gate Charge at 10V VGS = 10V
Total Gate Charge at 5V VGS = 4.5V - 8.1 10.5 nC
Gate to Source Gate Charge
Gate to Drain “Miller” Charge - 2.3 - nC

V

= 75V

DS

I

= 26A

D

(Note 4)

ESR Equivalent Series Resistance (G-S) Drain shorted to Source, f = 1MHz - 1.48 - Ω

- 1323 1760 pF

- 17.6 39 nC

-4.7-nC

μA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 9.3 28.6 ns
Turn-Off Delay Time - 26.9 63.8 ns
Turn-Off Fall Time - 3.2 16.4 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 3mH, I

3. I

≤ 26A, di/dt ≤ 200A/μs, VDD ≤ BV

SD

4. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 26 A
Maximum Pulsed Drain to Source Diode Forward Current - - 104 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 169 - nC

= 6.75A, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

V

= 75V, ID = 26A

DD

V

= 10V, R

GS

(Note 4)

= 0V, I

GS

= 0V, I

V

GS

dI

/dt = 100A/μs

F

= 4.7Ω

GEN

= 26A - - 1.25 V

SD

= 26A

SD

-12.835.6ns

-70-ns

FDD390N15ALZ Rev.C1

2

www.fairchildsemi.com

Typical Performance Characteristics

0.1 1 10

0.05

0.1

1

10

100

1000

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

V

GS

= 10.0V

5.5V

5.0V

4.5V

4.0V

3.5V

3.0V

123456

1

10

100

-55oC

150oC

*Notes:

1. V

DS

= 10V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

1

10

100

200

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 20406080100

20

40

60

80

100

*Note: TC = 25oC

VGS = 10V

VGS = 4.5V

R

DS(ON)

[mΩ],

Drain-Source On-Resistance

ID, Drain Current [A]

0.1 1 10 100 200

2

10

100

1000

2000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz
C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 4 8 12 16 20

0

2

4

6

8

10

*Note: ID = 26A

VDS = 30V
V

DS

= 75V

V

DS

= 120V

V

GS

, Gate-Source Voltage [V]

Qg, Total Ga te Charge [n C ]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDD390N15ALZ N-Channel PowerTrench

®

MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDD390N15ALZ Rev.C1

3

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