Fairchild FDD3860 service manual
tm
FDD3860
(
)
N-Channel PowerTrench® MOSFET
100V, 29A, 36mΩ
Features
Max r
High performance trench technology for extremely low r
100% UIL tested
RoHS Compliant
= 36mΩ at VGS = 10V, ID = 5.9A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench® process. This part is
tailored for low r
ruggedness for a wide range of switching applications
Applications
DC-AC Conversion
Synchronous Rectifier
October 2008
and low Qg figure of merit, with avalanche
DS(on)
FDD3860 N-Channel PowerTrench
.
®
MOSFET
D
G
D
S
D-PAK
TO-252
G
TO-252
S
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Silicon limited) TC = 25°C 29
-Pulsed 60
Single Pulse Avalanche Energy (Note 3) 121 mJ
Power Dissipation TC = 25°C 69
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25°C unless otherwise noted
C
= 25°C (Note 1a) 6.2
A
= 25°C (Note 1a) 3.1
A
A -Continuous T
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.8
Thermal Resistance, Junction to Ambient (Note 1a) 40
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD3860 FDD3860 D-PAK (TO-252) 13’’ 12mm 2500 units
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.C1
°C/W
1
www.fairchildsemi.com
FDD3860 N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 100 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 80V, V
Gate to Source Leakage Current VGS = ±20V, V
ID = 250µA, referenced to 25°C 98 mV/°C
= 0V 1 µA
GS
= 0V ±100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2.5 3.8 4.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 10V, ID = 5.9A 20 S
ID = 250µA, referenced to 25°C -11.4 mV/°C
VGS = 10V, ID = 5.9A 29 36
VGS = 10V, ID = 5.9A, TJ = 125°C 51 64
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 100 130 pF
Reverse Transfer Capacitance 45 70 pF
VDS = 50V, VGS = 0V,
f = 1MHz
1310 1740 pF
Gate Resistance f = 1MHz 1.6 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 10 21 ns
Turn-Off Delay Time 24 39 ns
VDD = 50V, ID = 5.9A,
VGS = 10V, R
GEN
= 6Ω
16 29 ns
Fall Time 7 15 ns
Total Gate Charge at 10V
Gate to Source Charge 7.1 nC
VDD = 50V, ID = 5.9A
22 31 nC
Gate to Drain “Miller” Charge 6.3 nC
mΩ
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
R
θJC
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.C1
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 40 64 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
= 25°C, L = 3mH, IAS = 9A, VDD = 100V, VGS = 10V.
J
is determined by the user’s board design.
θJA
V
V
IF = 5.9A, di/dt = 100A/µs
a)
40°C/W when mounted on a
2
pad of 2 oz copper
1 in
= 0V, IS = 2.0A (Note 2) 0.7 1.2
GS
= 0V, IS = 5.9A (Note 2) 0.8 1.3
GS
34 55 ns
b)
96°C/W when mounted
on a minimum pad.
V
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