Fairchild FDD3672 service manual

FDD3672

N-Channel UltraFET® Trench MOSFET 100V, 44A, 28mΩ

FDD3672

March 2010

Features

•r

•Q

• Low Miller Charge

= 24mΩ (Typ.), VGS= 10V, ID = 44A

DS(ON)

(tot) = 24nC (Typ.), V

g

GS

= 10V

Applications

• DC/DC converters and Off-Line UPS

• DistributedPower Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• Low Qrr Body Diode

• Optimized effici ency at high frequ encies

• High Voltage SynchronousRectifier

• UIS C apabil ity (Single Pulse and R epetitive Pulse)

Formerly developmental type 82760

D

S

GATE

SOURCE

TO-252AA

MOSFET Maximum Ratings T

DRAIN

(FLANGE)

= 25°C unless otherwise noted

C

G

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Cur re nt Continuous (T

I

D

Continuous (T Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 31 A

C

= 25oC, VGS = 10V, R

amb

= 52oC/W) 6.5 A

θJA

44 A

Pulsed Figure 4 A

E

AS

P

D

T

, T

J

STG

Single Pulse Avalanche Energy (Note 1) 120 mJ Power dissipation 135 W Derate above 25

o

C 0.9 W/oC

Operating and Storage Temperature -55 to 175

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

Thermal Resistance Junction to Case TO-252 1.11 Thermal Resistance Junction to Ambient TO-252 100 Thermal Resistance Junction to Am bient TO-252, 1i n2 copper pad ar ea 52

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

certification.

o

C/W

o

C/W

o

C/W

FDD3672 Rev. A2

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD3672 FDD3672 TO-252AA 330mm 16mm 2500 units

FDD3672

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain t o Source Br eakdown V oltage ID = 250µA, VGS = 0V 100 - - V

V

= 80V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC= 150oC- - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

Drain to Source On Resistance

= 44A, V

I

D

= 21A, VGS = 6V, - 0.031 0.047

D

I

=44A, VGS=10V, TC=175oC - 0.054 0.068

D

= 10V - 0.024 0.028

GS

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gs2 gd

Input Capacitance Output Capacitance - 247 - pF Reverse Transfer Capacitance - 62 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Char g e at 10 V VGS = 0V to 10V Thresh o ld G ate Ch arg e VGS = 0V to 2V - 3 4.5 nC Gate to Source Gate Charge - 8.6 - nC Gate Charge Thr eshold to Plateau - 5.6 - nC

V

DD

= 44A

I

D

= 1.0m A

I

g

= 50V

Gate to Drain “Miller” Charge - 5.6 - nC

-1710- pF

-2436nC

µA

ΩI

Resistive Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 11 - ns Rise Time - 59 - ns T u rn-Off Delay Time - 26 - ns Fall Time - 44 - ns T u rn-Off Time - - 104 ns

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Notes: 1: Starting T 2: Pulse Width = 100s

Source to Drain Diode Voltage Reverse Recovery Time ISD = 44A, dISD/dt =100A/µs- - 52 ns

Reverse Recovery Charge ISD = 44A, dISD/dt =100A/µs- - 80nC

= 25°C, L = 0.6mH, IAS = 20A.

J

(VGS = 10V)

V

DD

V

GS

I

SD

I

SD

--104ns

= 50V, ID = 44A = 10V, RGS = 11.0Ω

= 44A - - 1.25 V

= 21A - - 1.0 V

FDD3672

Typical Characteristics T

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

TC, CASE TEMPERATURE (oC)

= 25°C unless otherwise noted

C

125

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

150

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

V

= 10V

GS

Figure 2. Maximum Continuous Drain Curr ent vs

Case Temperature

, NORMALIZED Z

, PEAK CURRENT (A) I

θJC

DM

THERMAL IMPEDANCE

500

100

30

0.1

0.01

10

-5

10

VGS = 10V

-5

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

-4

10

-3

10

t, PULSE WIDTH (s)

-2

10

-1

10

TC = 25oC

FOR TEMPERATURES ABOVE 25 CURRENT AS FOLLOWS:

I = I

P

DM

1/t2

x R

θJC

0

10

o

25

0

10

t

1

t

2

+ T

θJC

C

C DERATE PEAK

175 - T

C

150

1

10

1

10

Figure 4. Peak Current Capability

Typical Characteristics T

= 25°C unless otherwise noted

C

FDD3672

300

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0 t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

100

10

, AVALANCHE CURRENT (A)

AS

I

STARTING TJ = 150oC

1

0.001 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 5. Unclamped Inductive Switching

Capability

80

TC = 25oC

60

40

, DRAIN CURRENT (A)

20

D

I

0

0 0.5 1.0 1.5 2.0 2.5 3.0

VGS = 10V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

VGS = 5V

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 7V

VGS = 6V

80

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V

= 15V

DD

60

40

TJ = 25oC

20

, DRAIN CURRENT (A)

D

I

0

10

3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 175oC

TJ = -55oC

Figure 6. Transfer Characteristics

40

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

35

30

25

20

15

DRAIN TO SOURCE ON RESISTANCE (m Ω)

0 1020304050

VGS = 6V

VGS = 10V

I

, DRAIN CURRENT (A)

D

Figure 7. Saturation Characte ri stics Figure 8. Drain t o Source On Resis tance v s Dr ain

Current

2.5 PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 44A

Figure 9. Normalized Drain to Source On

Resistance vs Junction Temperature

1.2 VGS = VDS, ID = 250µA

1.0

0.8

NORMALIZED GATE

0.6

THRESHOLD VOLTAGE

0.4

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

Figure 10. Normalized Gat e Threshol d Voltage vs

Junction Temperature