Fairchild FDD3670 service manual
FDD3670
FDD3670
100V N-Channel PowerTrench MOSFET
June 2001
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications.
DS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 34 A, 100 V. R
R
• Low gate charge (57 nC typical)
• Fast switching speed
• High performance trench technology for extremely
low R
• High power and current handling capability
DS(ON)
= 32 mΩ @ VGS = 10 V
DS(ON)
= 35 mΩ @ VGS = 6 V
DS(ON)
D
D
G
S
TO-252
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 100 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1) 34 A
Drain Current – Pulsed 100
PD
TJ, T
STG
Maximum Power Dissipation @ TC = 25°C (Note 1)
@ TA = 25°C (Note 1a)
@ TA = 25°C (Note 1b)
Operating and Storage Junction Temperature Range –55 to +175
±20
83
3.8
1.6
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case (Note 1) 1.8
Thermal Resistance, Junction-to-Ambient (Note 1b) 96
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD3670 FDD3670 13’’ 16mm 2500 units
2001 Fairchild Semiconductor Corporation FDD3670 Rev C(W)
FDD3670
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Single Pulse Drain-Source
DSS
VDD = 50 V, ID = 7.3 A 360 mJ
Avalanche Energy
IAR Maximum Drain-Source Avalanche
7.3 A
Current
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 V
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C
Coefficient
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
92
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 7.3 A
VGS = 10 V, ID = 7.3 A, TJ = 125°C
VGS = 6 V, ID = 7.0 A
I
On–State Drain Current VGS = 10 V, VDS = 5 V 25 A
D(on)
2 2.5 4 V
–7.2
22
39
24
32
56
35
mV/°C
m Ω
gFS Forward Transconductance VDS = 5 V, ID = 7.3 A 15 31 S
Dynamic Characteristics
C
Input Capacitance 2490 pF
iss
C
Output Capacitance 265 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = 50 V, V
f = 1.0 MHz
= 0 V,
GS
80 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 16 26 ns
d(on)
tr Turn–On Rise Time 10 18 ns
t
Turn–Off Delay Time 56 84 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 57 80 nC
Qgs Gate–Source Charge 11 nC
Qgd Gate–Drain Charge
VDD = 50 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 50 V, ID = 7.3 A,
VGS = 10 V
25 40 ns
15 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.7 A
VSD
Notes:
1. R
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
a) R
= 40oC/W when
θJA
mounted on a 1in2 pad of
2oz copper.
is determined by the user's board design.
θCA
VGS = 0 V, IS = 2.7 A (Note 2) 0.72 1.2 V
b) R
= 96oC/W on a
θJA
minimum mounting pad.
FDD3670 Rev C(W)
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