Fairchild FDD306P service manual

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FDD306P P-Channel 1.8V Specified PowerTrench

January 2005

FDD306P
P-Channel 1.8V Specified PowerTrench

®

MOSFET

Features

–6.7 A, –12 V. R
R

Fast switching speed

High performance trench technology for extremely
low R

DS(ON)

High power and current handling capability

G

Absolute Maximum Ratings

DS(ON)

DS(ON)

R

DS(ON)

S

= 28 m Ω @ V
= 41 m Ω @ V
= 90 m Ω @ V

D

TO-252

= –4.5 V

GS

= –2.5 V

GS

= –1.8 V

GS

T

=25°C unless otherwise noted

A

Applications

DC/DC converter

General Description

This P-Channel 1.8V Specified MOSFET uses Fairchild’s
advanced low voltage PowerTrench process. It has been opti­mized for battery power management.

S

G

D

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

T

, T

J

STG

Thermal Characteristics

R

JC

R

JA

R

JA

Drain-Source Voltage –12 V

Gate-Source Voltage

Drain Current – Continuous (Note 3) –6.7 A

– Pulsed (Note 1a) –54

Power Dissipation for Single Operation (Note 1) 52 W

(Note 1a) 3.8

(Note 1b) 1.6

Operating and Storage Junction Temperature Range –55 to +175

Thermal Resistance, Junction-to-Case (Note 1) 2.9

Thermal Resistance, Junction-to-Ambient (Note 1a) 40

Thermal Resistance, Junction-to-Ambient (Note 1b) 96

8V

C/W

C/W

C/W

®

MOSFET

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD306P FDD306P 13’’ 12mm 2500 units

©2005 Fairchild Semiconductor Corporation

FDD306P Rev. C

1

www.fairchildsemi.com

θ

θ

θ

∆

µ

±

∆

T

Electrical Characteristics

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

BV

∆ T

I

DSS

I

GSSF

On Characteristics (Note 2)

V

GS(th)

V

GS(th)

∆ T

R

DS(on)

I

D(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Switching Characteristics (Note 2)

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Tr r Diode Reverse Recovery Time IF = –6.7 A,

Irm Diode Reverse Recovery Current 0.9 A

Qrr Diode Reverse Recovery Charge 17 nC

Notes:

1. R
R

Drain–Source Breakdown Voltage V

Breakdown Voltage Temperature Coefficient I

DSS

J

Zero Gate Voltage Drain Current V

Gate–Body Leakage V

Gate Threshold Voltage V

Gate Threshold Voltage
Temperature Coefficient

J

Static Drain–Source
On–Resistance

On–State Drain Current V

Forward Transconductance V

Input Capacitance V

Output Capacitance 590 pF

= 0 V, I

GS

= –250 µ A, Referenced to 25 ° C –0.6 mV/ ° C

D

= –10 V, V

DS

= ± 8V, V

GS

= V

DS

I

= –250 µ A, Referenced to 25 ° C 2.2 mV/ ° C

D

V

= –4.5 V, I

GS

V

= –2.5 V, I

GS

V

= –1.8 V, I

GS

V

= –4.5 V, I

GS

= –4.5 V, V

GS

= –5 V, I

DS

= –6 V, V

DS

f = 1.0 MHz

= –250 µ A –12 V

D

= 0 V –1

GS

= 0 V

DS

, I

= –250 µ A –0.4 –0.5 –1.5 V

GS

D

= –6.7 A

D

= –6.1 A

D

= –4.8 A

D

= –6.7A, T

D

= –5 V –45 A

DS

= –6.7 A 22 S

D

= 0 V,

GS

= 125 ° C

J

21
29
42
25

1290 pF

100 nA

28
41
90

m Ω

Reverse Transfer Capacitance 430 pF

Gate Resistance V

Tu r n–On Delay Time V

Tu r n–On Rise Time 816ns

= 15 mV, f = 1.0 MHz 4.2

GS

= –6 V, I

DD

V

= –4.5 V, R

GS

= –1 A,

D

GEN

= 6 Ω

16 29 ns

Tu r n–Off Delay Time 34 54 ns

Tu r n–Off Fall Time 41 65 ns

Total Gate Charge V

Gate–Source Charge 2.0 nC

DS

V

GS

= –6V, I
= –4.5 V

= –6.7 A,

D

15 21 nC

Gate–Drain Charge 4.4 nC

Maximum Continuous Drain–Source Diode Forward Current –3.2 A

Drain–Source Diode Forward Voltage VGS = 0 V, IS = –3.2 A (Note 2) –0.8 –1.2 V

37 ns

diF/dt = 100 A/µs (Note 3)

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

JA

is guaranteed by design while R

JC

is determined by the user's board design.

CA

a) R

= 40°C/W when mounted

θJA

2

pad of 2 oz copper

on a 1in

b) R

= 96°C/W when mounted on a

θJA

minimum pad.

Ω

FDD306P P-Channel 1.8V Specified PowerTrench

A

®

MOSFET

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%

3. Maximum current is calculated as: where P

4. Starting T

= 25°C, L = TBD, I

J

AS

= -6.7A

P

-----------------------­R

DS ON()

FDD306P Rev. C

is maximum power dissipation at T

D

D

2

= 25°C and R

C

DS(on)

is at T

J(max)

and V

GS

= 10V.

www.fairchildsemi.com