FDD2582
N-Channel PowerTrench® MOSFET
150V, 21A, 66mΩ
FDD2582
September 2002
Features
•r
•Q
• Low Miller Charge
•Low Q
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82855
= 58mΩ (Typ.), V
DS(ON)
(tot) = 19nC (Typ.), V
g
Body Diode
RR
= 10V, ID = 7A
GS
= 10V
GS
Applications
• DC/DC converters and Off-Line UPS
• Distributed Pow er Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Re ctifier
• Direct Injection / Diesel Injection System
• 42V Automotive Lo ad Control
• Electronic Valve T rain System
DRAIN
(FLANGE)
GATE
SOURCE
TO-252AA
FDD SERIES
MOSFET Maximum Ratings T
= 25°C unless otherwise noted
C
D
G
S
Symbol Parameter Ratings Units
V
DSS
V
GS
Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Curr e nt
I
D
Continuous (T
Continuous (T
Continuous (T
= 25 oC, VGS = 10V)
C
= 100 oC, VGS = 10V) 15
C
= 25oC, VGS = 10V, R
amb
= 52oC/W) 3.7 A
θ JA
21 A
Pulsed Figure 4 A
E
AS
P
D
, T
T
J
STG
Single Pulse Avalanche Energy (Note 1) 59 mJ
Power dissipation 95 W
o
Derate above 25
C0 . 6 3 W /
Operating and Storage Temperature -55 to 175
o
C
o
C
Thermal Characteristi cs
R
θ JC
R
θ JA
R
θ JA
This product ha s been des igned to me et the e xtr eme test c ondit ions and envir onment deman ded by the automot ive indus t ry. For a
All Fairchild Semiconductor prod ucts are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
©2002 Fairchild Semiconductor Corporation
Thermal Resistance Junction to Case TO-252 1.58
Thermal Resistance Junction to Ambient TO-252 100
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad ar ea 52
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
certification.
FDD2582 Rev. B
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD2582 FDD2582 TO-252AA 330mm 16mm 2500 units
FDD2582
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
I
DSS
I
GSS
VDSS
Drain t o Source Breakdown Volta ge ID = 250µ A, VGS = 0V 150 - - V
V
= 120V - - 1
Zero Gate Voltage Drain Current
DS
= 0V TC = 150oC- - 2 5 0
V
GS
Gate to Source Leakage Current VGS = ±20V - - ±100 nA
On Characteristics
V
GS(TH)
r
DS(ON)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2 - 4 V
I
Drain to Source On Resistance
= 7A, V
D
I
= 4A, VGS = 6V, - 0.066 0.099
D
I
= 7A, V
D
T
= 175oC
C
= 10V - 0.058 0.066
GS
= 10V,
GS
- 0.151 0.172
Dynamic Characteristics
C
C
C
Q
Q
Q
Q
Q
ISS
OSS
RSS
g(TOT)
g(TH)
gs
gs2
gd
Input Capacitance
Output Capacitance - 145 - pF
Reverse Transfer Capacitance - 30 - pF
= 25V, VGS = 0V,
V
DS
f = 1MHz
Total G ate Ch arg e at 10 V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 2.4 3.2 nC
Gate to Source Gate Charge - 6.2 - nC
Gate Charge Threshold to Plateau - 3.8 - nC
V
DD
I
= 7A
D
I
= 1.0m A
g
= 75V
Gate to Drain “Miller” Charge - 4.2 - nC
-1 2 9 5- p F
-1 92 5n C
µA
Ω
Resistive Switching Characteristics
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time - 8 - ns
Rise Time - 19 - ns
T u rn-Off Delay Time - 32 - ns
Fall Time - 19 - ns
Turn-Off Time - - 77 ns
(VGS = 10V)
V
DD
V
GS
--4 1n s
= 75V, ID = 7A
= 10V, RGS = 16Ω
Drain-Source Diode Characteristics
I
= 7A - - 1 .25 V
V
SD
t
rr
Q
RR
Notes:
1: Starting T
©2002 Fairchild Semiconductor Corporation FDD2582 Rev. B
Source to Drain Di ode Voltage
Reverse Recovery Time ISD = 7A, dISD/dt = 100A/µs- -6 7n s
Reverse Recovered Charge ISD = 7A, dISD/dt = 100A/µs - - 134 nC
= 25°C, L = 1.17 mH, IAS = 10A.
J
SD
= 4A - - 1.0 V
I
SD
FDD2582
Typical Characteristics T
= 25°C unless otherwise noted
C
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
02 55 07 51 0 0 1 7 5
125
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
150
25
V
= 10V
GS
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
Figure 2. Maximum Continuous Drain Curr ent vs
Case Temperature
P
θ JC
DM
t
1
t
2
1/t2
x R
+ T
θ JC
C
0
10
1
10
0.1
, NORMALIZED
θ JC
Z
THERMAL IMPEDANCE
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
0.01
SINGLE PULSE
-5
10
-4
10
-3
10
-2
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
300
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
VGS = 10V
, PEAK CURRENT (A)
DM
I
20
-5
10
-4
10
-3
10
-2
10
-1
10
t, PUL SE WIDTH (s)
TC = 25oC
FOR TEMPERATURES
o
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
I = I
25
10
C
150
0
1
10
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation FDD2582 Rev. B
Typical Characteristics T
= 25° C unless otherwise noted
C
FDD2582
200
100
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
1
, DRAIN CURRENT (A)
D
I
SINGLE PULSE
TJ = MAX RATED
T
= 25oC
C
0.1
11 0
DS(ON)
VDS, DRAIN TO SOURCE VOLTAGE (V)
10µs
100µs
1ms
10ms
DC
100
Figure 5. Forward Bias Safe Operating Area
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
40
30
20
, DRAIN CURRENT (A)
D
I
10
= 15V
DD
TJ = 25oC
TJ = 175oC
TJ = -55oC
100
If R = 0
300
tAV = (L)(IAS)/(1.3*RATED BV
If R ≠ 0
t
= (L/R)ln[(IAS*R)/(1.3*RATED BV
AV
10
, AVALANCHE CURRENT (A)
AS
I
1
0.001 0 .01 0.1 1
ST ARTING TJ = 150oC
tAV, TIME IN AVALANCHE (ms)
- VDD)
DSS
DSS
STARTING TJ = 25oC
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
50
VGS = 10V
PULSE DURATION = 80µs
40
DUTY CYCLE = 0.5% MAX
TC = 25oC
30
20
, DRAIN CURRENT (A)
D
I
10
- VDD) +1]
10
VGS = 7V
VGS = 6V
VGS = 5V
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
VGS, GATE TO SOURCE VOLTAGE (V)
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics
90
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
VGS = 6V
70
60
DRAIN TO SOURCE ON RESISTANCE (m Ω)
50
VGS = 10V
0 5 10 15 20 25
I
, DRAIN CURRENT (A)
D
Figure 9. Drain to So urce On Resistanc e v s Drai n
Current
©2002 Fairchild Semiconductor Corporation FDD2582 Rev. B
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
ON RESISTANCE
1.0
NORMALIZED DRAIN TO SOURCE
0.5
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
VGS = 10V, ID = 21A
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature