Fairchild FDD14AN Service Manual

FDD14AN06LA0

N-Channel PowerTrench® MOSFET 60V, 50A, 14.6mΩ

FDD14AN06LA0

January 2004

Features

•r

•Q

• Low Miller Charge

•Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 83557

MOSFET Maximum Ratings T

= 12.8mΩ (Typ.), V

DS(ON)

(tot) = 25nC (Typ.), V

g

Body Diode

RR

GATE

SOURCE

TO-252AA

FDD SERIES

= 5V, ID = 50A

GS

= 5V

GS

DRAIN

(FLANGE)

= 25°C unless otherwise not ed

C

Applications

• Motor / Body Load Control

• ABS Systems

• Powertrain Management

• Injection Systems

• DC-DC converter s and Off-line UPS

• Distributed P ower Arc hitectures and VRMs

• Primary Switch for 12V and 24V systems

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 60 V Gate to Source Voltage ±20 V Drain Curr e nt Continuous (T

I

D

Continuous (T Continuous (T

< 100oC, VGS = 10V)

C

< 80oC, VGS = 5V) 50 A

C

= 25oC, VGS = 5V, with R

amb

= 52oC/W) 9.5 A

θJA

50 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 55 mJ Power dissipation 125 W

o

Derate above 25

C0.83W/

Operating and Storage T emperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions an d environment dem anded by the au tomotive industry. For a

All Fairchild Semiconductor products are manufactu red, assembled and tested under ISO9000 and QS9000 quality systems

Thermal Resistance Junction to Case TO-252 1.2 Thermal Resistance Junction to Ambient TO-252 100 Thermal Resi st an ce Junc ti on to Amb i ent TO -2 52 , 1in2 copper pad area 52

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be fou nd a t: http://ww w.f airc hilds e m i.co m /pr oduc ts/dis c rete/reliab ility/ind ex.html.

certification.

FDD14AN06LA0 Re v. C

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD14AN 06LA0 FDD14AN 06LA0 TO- 252AA 330mm 16mm 2500 units

FDD14AN06LA0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Con ditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Volt ag e ID = 250µA, VGS = 0V 60 - - V

V

= 50V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1-3V

= 50A, VGS = 10V - 0.0102 0.0116

I

D

I

= 50A, VGS = 5V - 0.0128 0.0146

Drain to S ou r c e On Re si st ance

D

I

= 50A, VGS = 5V,

D

T

= 175oC

J

- 0.028 0.033

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gs2 gd

Input Capacitance Output Capacitanc e - 270 - pF Reverse Transfer Capacitance - 115 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 5V VGS = 0V to 5V Threshold Gate Charge VGS = 0V to 1V - 2.7 3.5 nC Gate to Source Gate Charg e - 9.7 - nC Gate Charge Threshold to Plateau - 7.0 - nC

V

DD

I

= 50A

D

I

= 1.0m A

g

= 30V

Gate to Drain “Miller” Charge - 8.7 - nC

- 2810 - pF

25 32 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 14 - ns Rise Time - 132 - ns Turn-Off D elay Time - 27 - ns Fall Time - 47 - ns Turn-Off Time - - 111 ns

(VGS = 5V)

V

= 30V, ID = 50A

DD

V

= 5V, RGS = 5.1Ω

GS

--218ns

Drain-Source Diode Characteristics

I

= 50A - - 1.25 V

V

SD

t

rr

Q

RR

Notes: 1: Starting TJ = 25°C, L = 70uH, IAS = 40A.

Source to Drain Diode Voltage Reverse Recovery Time ISD = 50A, dISD/dt = 100A/µs- -30ns

Reverse Recovered Charge ISD = 50A, dISD/dt = 100A/µs- -24nC

SD

= 25A - - 1.0 V

I

SD

FDD14AN06LA0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

80

60

40

, DRAIN CURRENT (A)

D

20

I

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

CURRENT LIMITED BY PACKAGE

VGS = 5V

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t1/t PEAK TJ = PDM x Z

-1

10

θJC

0

10

VGS = 10V

2

x R

θJC

t

1

+ T

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

VGS = 10V

VGS = 5V

, PEAK CURRENT (A)

100

DM

I

40

-5

10

-4

10

-3

10

-2

10

-1

10

t, PUL SE WIDTH (s)

TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

Typical Characteristics T

= 25°C unless otherwise noted

C

FDD14AN06LA0

1000

10µs

100

10

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

, DRAIN CURRENT (A)

D

I

1

SINGLE PULSE TJ = MAX R ATED

TC = 25oC

0.1 110100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

500

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.001 0.01 0.1 1 10 100

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

100

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

V

= 15V

DD

75

50

TJ = 25oC

, DRAIN CURRENT (A)

D

I

25

TJ = 175oC

TJ = -55oC

0

2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V)

100

75

50

, DRAIN CURRENT (A)

D

I

25

0

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

STARTING TJ = 150oC

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

Capability

VGS = 10V

VGS = 5V

VGS = 4V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

0 0.5 1.0 1.5 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25oC

VGS = 3V

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

13

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

12

VGS = 5V

11

10

DRAIN TO SOURCE ON RESISTANCE(mΩ)

9

0 1020304050

VGS = 10V

ID, DRAIN CURRENT (A)

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

2.5

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 5V, ID = 50A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

Fairchild FDD14AN Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual