Fairchild FDD10N20LZ service manual
FDD10N20LZ
G
S
D
G
S
D
G
S
D
D-PAK
FDD- Series
N-Channel MOSFET
200V Logic, 7.6A, 0.36
FDD10N20LZ 200V N-Channel MOSFET
December 2010
TM
UniFET
Features
•R
• Low Gate Charge ( Typ.12nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
= 0.30( Typ.) @ VGS = 10V, ID = 3.8A
DS(on)
( Typ.11pF)
rss
Description
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe, DMOS
technology.
This advance technology has been especially tailored to minimize
on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode. These devices are well suited for high efficient switching
mode power supplies and active power factor correction.
MOSFET Maximum Ratings T
Symbol Parameter FDD10N20LZ Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P
D
, T
T
J
STG
T
L
Drain to Source Voltage 200 V
Gate to Source Voltage ±20 V
Drain Current
Drain Current - Pulsed (Note 1) 30 A
Single Pulsed Avalanche Energy (Note 2) 121 mJ
Avalanche Current (Note 1) 7.6 A
Repetitive Avalanche Energy (Note 1) 8.3 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
= 25
C unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 56 W
C
- Derate above 25
= 25oC) 7.6
C
= 100oC) 4.5
C
o
C0.45W/
300
o
o
A
o
C
C
C
Thermal Characteristics
Symbol Parameter
R
JC
R
JA
©2010 Fairchild Semiconductor Corporation
FDD10N20LZ Rev. A
Thermal Resistance, Junction to Case - 2.2
Thermal Resistance, Junction to Ambient - 110
Typ Max
Units
o
C/W
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD10N20LZ FDD10N20LZ D-PAK 380mm 16mm 2500
FDD10N20LZ 200V N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
BV
T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TC = 25oC 200 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±16V, V
I
= 250A, Referenced to 25oC-0.2-V/
D
V
= 200V, V
DS
= 160V, TC = 125oC--10
V
DS
= 0V - - 1
GS
= 0V - - ±10 A
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250A1.0-2.5V
V
= 10V, ID = 3.8A - 0.30 0.36
Static Drain to Source On Resistance
Forward Transconductance
GS
= 5V, ID = 3.8A - 0.32 0.38
V
GS
= 20V, ID = 3.8A (Note 4)
V
DS
-8-S
Dynamic Characteristics
C
C
C
Q
Q
Q
iss
oss
rss
g(tot)
gs
gd
Input Capacitance
Output Capacitance - 75 100 pF
Reverse Transfer Capacitance - 11 17 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 100V ID = 7.6A
Gate to Source Gate Charge - 2 - nC
Gate to Drain “Miller” Charge - 3.5 - nC
DS
V
= 10V
GS
(Note 4, 5)
- 440 585 pF
-1216nC
A
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 15 40 ns
Turn-Off Delay Time - 55 120 ns
Turn-Off Fall Time - 25 60 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4.2mH, I
3. I
7.6A, di/dt 200A/s, VDD BV
SD
4. Pulse Test: Pulse Width 300 s, Duty cycle 2.0%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 7.6 A
Maximum Pulsed Drain to Source Diode Forward Current - - 30 A
Drain to Source Diode Forward Voltage VGS = 0V, I
Reverse Recovery Time
Reverse Recovery Charge - 0.5 - C
= 7.6A, VDD = 50V, RG = 25, Starting TJ = 25C
AS
, Starting TJ = 25C
DSS
= 100V, ID = 7.6A
V
DD
R
= 25
G
(Note 4, 5)
= 7.6A - - 1.4 V
SD
V
= 0V, I
GS
dI
/dt = 100A/s (Note 4)
F
SD
= 7.6A
-1030ns
-115-ns
FDD10N20LZ Rev. A
2
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Typical Performance Characteristics
0.1 1 10
0.1
1
10
20
*Notes:
1. 250
s Pulse Test
2. T
C
= 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 10V
7V
5V
4.5V
4V
3.5V
23456
0.1
1
10
30
-55oC
150oC
* Notes :
1. V
DS
= 20V
2. 250
s Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0 5 10 15 20 25
0.2
0.4
0.6
0.8
1.0
* Note : TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(on)
[],
Drain-Source On-Resistance
ID, Drain Current [A]
0.4 0.8 1.2 1.6
1
10
150oC
Notes:
1. VGS = 0V
2. 250
s Pulse Test
50
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10
1
10
100
1000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
* Note:
1. V
GS
= 0V
2. f = 1MH z
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V ]
30
036912
0
2
4
6
8
10
* Note : ID = 7.6A
VDS = 50V
V
DS
= 100V
V
DS
= 160V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gat e Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDD10N20LZ 200V N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDD10N20LZ Rev. A
3
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