Fairchild FDD050N03B service manual

FDD050N03B

N-Channel PowerTrench® MOSFET

30V, 90A, 5mΩ

FDD050N03B N-Channel PowerTrench

March 2010

Features

•R

• Fast Switching Speed

• Low gate charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 2 V/ns

P

D

, T

T

J

T

L

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A.

= 3.7mΩ ( Typ.)@ VGS = 10V, ID = 25A

DS(on)

R

DS(on)

D

GS

Symbol Parameter FDD050N03B Units

Drain to Source Voltage 30 V

Gate to Source Voltage ±16 V

Drain Current

Drain Current - Pulsed (Note 1) 360 A

Single Pulsed Avalanche Energy (Note 2) 72 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +175 Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

D-PAK

FDD Series

= 25oC unless otherwise noted

C

- Continuous (T

(T

= 25oC) 65 W

C

- Derate above 25

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Application

• DC to DC Convertors / Synchronous Rectification

D

G

S

= 25oC, Silicon Limited) 90*

C

= 100oC, Silicon Limited) 63*

C

= 25oC, Package Limited) 50

C

o

C0.43W/

300

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case 2.3

Thermal Resistance, Junction to Ambient (Note 6) 40

o

A- Continuous (T

o

C

o

C

C/W

®

MOSFET

C

www.fairchildsemi.com1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD050N03B FDD050N03B D-PAK 330mm 16mm 2500

FDD050N03B N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV ΔBV

ΔT I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC30 - - V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 24V, V

Gate to Body Leakage Current VGS = ±16V, V

I

= 250μA, Referenced to 25oC-13-mV/

D

= 0V - - 1 μA

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA 1.25 2.0 3.0 V

V

= 10V, ID = 25A - 3.7 5.0

Static Drain to Source On Resistance

GS

= 4.5V, ID = 15A - 5.2 8.1

V

GS

Forward Transconductance VDS = 5V, ID = 50A (Note 4) - 169 - S

Dynamic Characteristics

C

Q

iss

oss

rss

g(tot)

gs

gs2

gd

Input Capacitance

Output Capacitance - 805 1070 pF

Reverse Transfer Capacitance - 85 130 pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 7.8 - nC

Gate Charge Threshold to Plateau - 3.8 - nC

Gate to Drain “Miller” Charge - 4.6 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 4.5 18 ns

Turn-Off Delay Time - 30 70 ns

Turn-Off Fall Time - 4.5 19 ns

= 15V, VGS = 0V

V

DS

f = 1MHz

V

= 15V, ID = 50A

DD

V

= 10V

GS

(Note 4,5)

V

= 15V, ID = 50A

DD

V

= 10V, R

GS

GEN

= 4.7Ω

(Note 4,5)

- 2160 2875 pF

-3343nC

-14.539ns

mΩ

o

C

®

MOSFET

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1mH, I

≤ 50A, di/dt ≤ 200A/μs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

6. When mounted on a 1 in

FDD050N03B Rev. A1

Maximum Continuous Drain to Source Diode Forward Current - - 90* A

Maximum Pulsed Drain to Source Diode Forward Current - - 360 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 19 - nC

= 12A, VDD = 27V, RG = 25Ω, Starting TJ = 25°C

AS

2

pad of 2 oz copper

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 50A - - 1.3 V

SD

= 50A

SD

2

-33-ns

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

1000

V

=

15.0 V

GS

10.0 V

8.0 V

7.0 V

6.0 V

5.0 V

100

4.5 V

4.0 V

3.5 V

3.0 V

10

, Drain Current[A]

D

I

*Notes:

1. 250

μ

s Pulse Test

= 25oC

2. T

1

0.01 0.1 1 4

C

VDS, Drain-Source Voltage[V]

300

*Notes:

= 20V

1. V

2. 250

DS

μ

s Pulse Test

175oC

100

10

, Drain Current[A]

1

D

I

0.1 12345

VGS, Gate-Source Voltage[V]

FDD050N03B N-Channel PowerTrench

25oC

-55oC

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

10

9

8

7

[mΩ],

DS(ON)

R

VGS = 4.5V

6

5

Drain-Source On-Resistance

4

3

0 50 100 150 200 250

ID, Drain Current [A]

500

100

175oC

10

, Reverse Drain Current [A]

S

I

1

0.20.40.60.81.01.21.4

25oC

*Notes:

1. VGS = 0V

2. 250

μ

s Pulse Test

VSD, Body Diode Forward Voltage [V]

*Notes: T

VGS = 10V

C

= 25

o

C

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

rss

= C

gd

3000

C

iss

2000

Capacitances [pF]

1000

0

0.1 1 10 30

C

oss

C

rss

VDS, Drain-Source Voltage [V]

*Notes:

1. V

= 0V

GS

2. f = 1MHz

10

VDS = 6V V

= 15V

8

DS

V

= 24V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0 5 10 15 20 25 30 35

*Notes: I

Qg, Total Gate Charge [nC]

D

= 50A

®

MOSFET

FDD050N03B Rev. A1

3

www.fairchildsemi.com