Fairchild FDC8884 service manual

FDC8884

SuperSOTTM -6

G

S

D

D

D

D

Pin 1

1

2

3

6

5

4

D

D

G

D

D

S

N-Channel Power Trench® MOSFET

30 V, 6.5 A, 23 mΩ

Features

 Max r
 Max r
 High performance trench technology for extremely low r
 Fast switching speed

 RoHS Compliant

= 23 mΩ at VGS = 10 V, ID = 6.5 A

DS(on)

= 30 mΩ at VGS = 4.5 V, ID = 6.0 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for

Application

 Primary Switch

r

switching performance.

DS(on)

January 2012

®

process that has

FDC8884 N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage (Note 3) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 8.0

-Pulsed 25
Power Dissipation (Note 1a) 1.6
Power Dissipation (Note 1b) 0.8
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C (Note 1a)

A

A6.5 -Continuous T

W

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 30
Thermal Resistance, Junction to Ambient (Note 1a) 78

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

.884 FDC8884 SSOT-6 7 ’’ 8 mm 3000 units

©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDC8884 Rev.C2

FDC8884 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V

I

= 250 μA, referenced to 25 °C 18 mV/°C

D

= 0 V 1 μA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA1.21.93.0V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -6 mV/°C

D

V

= 10 V, ID = 6.5 A 19 23

GS

= 4.5 V, ID = 6.0 A 25 30

GS

= 10 V, ID = 6.5 A, TJ = 125 °C 25 30

V

GS

Forward Transconductance VDD = 5 V, ID = 6.5 A 24 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 135 180 pF
Reverse Transfer Capacitance 16 25 pF

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 1.2 Ω

348 465 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 110ns
Turn-Off Delay Time 11 19 ns

= 15 V, ID = 6.5 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

510ns

Fall Time 110ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 1.0 nC

= 0 V to 4.5 V 2.5 3.5 nC

GS

V

DD

I

= 6.5 A

D

= 15 V

5.3 7.4 nC

Gate to Drain “Miller” Charge 0.8 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

1. R

θJA

R

is guaranteed by design while R

θJC

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

©2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FDC8884 Rev.C2

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 3 10 nC

is determined by the user's board design.

θCA

a. 78 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

= 0 V, IS = 6.5 A (Note 2) 0.86 1.2 V

GS

= 6.5 A, di/dt = 100 A/μs

I

F

14 22 ns

b.175 °C/W when mounted on
a minimum pad of 2 oz copper

FDC8884 N-Channel Power Trench

0 0.4 0.8 1.2 1.6 2.0

0

5

10

15

20

25

VGS = 6 V

VGS = 4.5 V

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

VGS = 4 V

VGS = 3.5 V

VGS = 10 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0 5 10 15 20 25

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VGS = 10 V

VGS = 3.5 V

VGS = 4 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 6 V

-75 -50 -25 0 25 50 75 100 125 150

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

ID = 6.5 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST ANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

20

40

60

80

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = 125 oC

T

J

= 25

o

C

ID = 6.5 A

r

DS(on)

, DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

VGS, GATE TO SOURCE V O L TAGE (V)

12345

0

5

10

15

20

25

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.01

0.1

1

10

30

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

®

MOSFET

Norma l i z e d O n - R esistance

vs Drain Current and Gate Voltage

Fig ure 3. Norm a lized On Re s ista n ce

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
FDC8884 Rev.C2

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current