Fairchild FDC8878 service manual

FDC8878

SuperSOTTM -6

G

S

D

D

D

D

Pin 1

1

2

3

6

5

4

D

D

G

D

D

S

N-Channel PowerTrench® MOSFET

30 V, 8.0 A, 16 mΩ
Features

 Max r
 Max r
 High performance trench technology for extremely low r
 Fast switching speed

 RoHS Compliant

= 16 mΩ at VGS = 10 V, ID = 8.0 A

DS(on)

= 18 mΩ at VGS = 4.5 V, ID = 7.5 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for

Applications

 Primary Switch

r

, switching performance.

DS(on)

January 2012

®

process that has

FDC8878 N-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage (Note 3) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 8.0

-Pulsed 32
Power Dissipation (Note 1a) 1.6
Power Dissipation (Note 1b) 0.8
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C (Note 1a) 8.0

A

A -Continuous T

W

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 30
Thermal Resistance, Junction to Ambient (Note 1a) 78

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

.888 FDC8878 SSOT-6 7 ’’ 8 mm 3000 units

©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDC8878 Rev.C2

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V

I

= 250 μA, referenced to 25 °C 13 mV/°C

D

= 0 V 1 μA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.2 1.6 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -5 mV/°C

D

V

= 10 V, ID = 8.0 A 12 16

GS

= 4.5 V, ID = 7.5 A 14 18

GS

= 10 V, ID = 8.0 A, TJ = 125 °C 16 21

V

GS

Forward Transconductance VDD = 5 V, ID = 8.0 A 43 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 318 425 pF
Reverse Transfer Capacitance 40 60 pF

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 1.2 Ω

782 1040 pF

FDC8878 N-Channel PowerTrench

mΩV

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 210ns
Turn-Off Delay Time 17 30 ns

= 15 V, ID = 8 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Fall Time 210ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 1.7 nC

= 0 V to 4.5 V 6 9 nC

GS

V

DD

I

D

= 15 V

= 8 A

Gate to Drain “Miller” Charge 2.0 nC

612ns

13 18 nC

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

is the sum of the junction-to-case and case -to-ambie nt ther mal resistan ce where the c ase ther mal referen ce is defi ned as the so lder moun ting su rface of the drai n pins.

1. R

θJA

R

is guaranteed by design while R

θJC

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 7 14 nC

is determined by the user's board design.

θCA

a. 78 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

= 0 V, IS = 8.0 A (Note 2) 0.8 1.2 V

GS

= 8.0 A, di/dt = 100 A/μs

I

F

b.175 °C/W when mounted on
a minimum pad of 2 oz copper

22 35 ns

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

©2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FDC8878 Rev.C2

FDC8878 N-Channel PowerTrench

0 0.3 0.6 0.9 1.2 1.5

0

8

16

24

32

VGS = 3.5 V

VGS = 4.5 V

VGS = 10 V

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

VGS = 3 V

VGS = 6 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0 8 16 24 32

0.5

1.0

1.5

2.0

2.5

V

GS

= 6 V

VGS = 3.5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 3 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 8 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

10

20

30

40

50

TJ = 125 oC

ID = 8 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

1234

0

8

16

24

32

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0 0.4 0.6 0.8 1.0 1.2 1.4

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

®

MOSFET

Fig ure 3. Norm a lize d On Re s ista n ce

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
FDC8878 Rev.C2

Figure 5. Transfer Characteristics

Figure 4.

On-Resista nce vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current