Fairchild FDC86244 service manual

FDC86244

SuperSOTTM -6

G

S

D

D

D

D

Pin 1

1

2

3

6

5

4

D

D

G

D

D

S

N-Channel Power Trench® MOSFET

150 V, 2.3 A, 144 mΩ

Features

 Max r
 Max r
 High performance trench technology for extremely low r
 High power and current handling capability in a widely used

surface mount package

 Fast switching speed
 100% UIL Tested
 RoHS Compliant

= 144 mΩ at VGS = 10 V, ID = 2.3 A

DS(on)

= 188 mΩ at VGS = 6 V, ID = 1.9 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for
ruggedness.

Applications

 Load Switch
 Synchronous Rectifier
 Primary Switch

November 2010

®

process that has

r

, switching performance and

DS(on)

FDC86244 N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2010 Fairchild Semiconductor Corporation
FDC86244 Rev.C

Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 2.3

-Pulsed 10
Single Pulse Avalanche Energy (Note 3) 12 mJ
Power Dissipation (Note 1a) 1.6
Power Dissipation (Note 1b) 0.8
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 30
Thermal Resistance, Junction to Ambient (Note 1a) 78

.244 FDC86244 SSOT-6 7 ’’ 8 mm 3000 units

= 25 °C unless otherwise noted

A

1

A

W

°C/W

www.fairchildsemi.com

FDC86244 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

ΔV

GS(th)

ΔT

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, V
Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 103 mV/°C

I

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 2.5 4.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 5 V, ID = 2.3 A 6 S

I

= 250 μA, referenced to 25 °C -9 mV/°C

D

V

= 10 V, ID = 2.3 A 113 144

GS

= 6 V, ID = 1.9 A 128 188

GS

= 10 V, ID = 2.3 A, TJ = 125 °C 214 273

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 32 45 pF
Reverse Transfer Capacitance 1.7 5 pF

= 75 V, VGS = 0 V,

V

DS

f = 1 MHz

260 345 pF

Gate Resistance 1.3 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 1.4 10 ns
Turn-Off Delay Time 10 20 ns

= 75 V, ID = 2.3 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Fall Time 3.1 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 1.0 nC

= 0 V to 5 V 2.4 4 nC

GS

V

DD

I

= 2.3 A

D

= 75 V

Gate to Drain “Miller” Charge 1.0 nC

4.7 10 ns

4.2 6 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

θJA

is guaranteed by design while R

R

θJC

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. Starting T

©2010 Fairchild Semiconductor Corporation
FDC86244 Rev.C

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 33 53 nC

is determined by the user's board design.

θCA

= 25 oC, L = 1.0 mH, IAS = 5.0 A, VDD = 135 V, VGS = 10 V.

J

GS

= 2.3 A, di/dt = 100 A/μs

I

F

a. 78 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

= 0 V, IS = 2.3 A (Note 2) 0.8 1.3 V

45 73 ns

b.175 °C/W when mounted on
a minimum pad of 2 oz copper

2

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FDC86244 N-Channel Power Trench

012345

0

2

4

6

8

10

VGS = 6 V

VGS = 4.5 V

VGS = 10 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 5 V

VGS = 4 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0246810

0

1

2

3

4

5

VGS = 4 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 6 V

VGS = 5 V

VGS = 4.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID = 2.3 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

100

200

300

400

500

TJ = 125 oC

ID = 2.3 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

123456

0

2

4

6

8

10

TJ = 25 oC

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

®

MOSFET

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDC86244 Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Res istance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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