Fairchild FDC8602 service manual

FDC8602

SuperSOTTM -6

G2

D2

S2

S1

D1

G1

Pin 1

Dual N-Channel PowerTrench® MOSFET

100 V, 1.2 A, 350 mΩ
Features

 Max r
 Max r
 High performance trench technology for extremely low r
 High power and current handling capability in a widely used

surface mount package

 Fast switching speed
 100% UIL Tested
 RoHS Compliant

= 350 mΩ at VGS = 10 V, ID = 1.2 A

DS(on)

= 575 mΩ at VGS = 6 V, ID = 0.9 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for
ruggedness.

Applications

 Load Switch
 Synchronous Rectifier

®

process that has

r

, switching performance and

DS(on)

July 2011

FDC8602 Dual N-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 1.2 A

-Pulsed 5 A
Single Pulse Avalanche Energy (Note 3) 1.5 mJ
Power Dissipation (Note 1a) 0.96
Power Dissipation (Note 1b) 0.69
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

W

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 60
Thermal Resistance, Junction to Ambient (Note 1a) 130

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

.862 FDC8602 SSOT-6 7 ’’ 8

©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDC8602 Rev.C

mm 3000 units

FDC8602 Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage I
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current V

= 250 μA, VGS = 0 V 100 V

D

I

= 250 μA, referenced to 25 °C 73 mV/°C

D

= 80 V, V

DS

= ±20 V, V

GS

= 0 V1μA

GS

= 0 V ±100nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, I
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance V

I

= 250 μA, referenced to 25 °C -8 mV/°C

D

V

= 10 V, ID = 1.2 A 285 350

GS

= 6 V, ID = 0.9 A 409 575

GS

= 10 V, ID = 1.2 A, T

V

GS

= 10 V, ID = 1.2 A1.3S

DS

= 250 μA23.24V

D

= 125 °C 489 600

J

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 17 25 pF
Reverse Transfer Capacitance 0.8 5 pF
Gate Resistance 1.6 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 1.7 10 ns
Turn-Off Delay Time 5.4 11 ns
Fall Time 2.3 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 0.4 nC
Gate to Drain “Miller” Charge 0.4 nC

= 50 V, VGS = 0 V,

V

DS

f = 1MHz

= 50 V, ID = 1.2 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 5 V0.61nC

GS

GEN

= 6 Ω

V

DD

I

= 1.2 A

D

= 50 V,

53 70 pF

3.5 10 ns

1.2 2 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is the sum of the junction-to-case and case -to-ambie nt ther mal resistan ce where the c ase ther mal referen ce is defi ned as the so lder moun ting su rface of the drai n pins.

θJA

R

is guaranteed by design while R

θJC

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T

©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FDC8602 Rev.C

Source-Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 12 21 nC

is determined by the user's board design.

θCA

a)

130 °C/W when mounted on
a 1 in2 pad of 2 oz copper

= 25 °C; N-ch: L = 3 mH, IAS = 1 A, VDD = 100 V, VGS = 10 V.

J

= 0 V, IS = 1.2 A (Note 2) 0.86 1.3 V

GS

= 1.2 A, di/dt = 100 A/μs

I

F

27 43 ns

b)

180 °C/W when mounted on a
mi n im u m p ad o f 2 o z co ppe r

FDC8602 Dual N-Channel PowerTrench

012345

0

1

2

3

4

5

VGS = 8 V

VGS = 7 V

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

VGS = 6 V

VGS = 5 V

VGS = 10 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

012345

0

1

2

3

4

VGS = 10 V

VGS = 5 V

VGS = 6 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 7 V

VGS = 8 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 1.2 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

5678910

0

300

600

900

1200

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = 125 oC

T

J

= 25

o

C

ID = 1.2 A

r

DS(on)

, DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

VGS, GATE TO SOURCE VO L TAGE (V)

2345678

0

1

2

3

4

5

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Nor m aliz e d On- R esis t ance

vs Drain Current and Gate Voltage

®

MOSFET

Fi gure 3. Normali zed On Resi sta nce

vs Junction Temperature

©2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
FDC8602 Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current