Fairchild FDC8602 service manual

FDC8602

SuperSOTTM -6

Pin 1

Dual N-Channel PowerTrench® MOSFET

100 V, 1.2 A, 350 mΩ Features

 Max r  Max r  High performance trench technology for extremely low r  High power and current handling capability in a widely used

surface mount package

 Fast switching speed  100% UIL Tested  RoHS Compliant

= 350 mΩ at VGS = 10 V, ID = 1.2 A

DS(on)

= 575 mΩ at VGS = 6 V, ID = 0.9 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been optimized for ruggedness.

Applications

 Load Switch  Synchronous Rectifier

process that has

, switching performance and

DS(on)

July 2011

FDC8602 Dual N-Channel PowerTrench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Current -Continuous (Note 1a) 1.2 A

-Pulsed 5 A Single Pulse Avalanche Energy (Note 3) 1.5 mJ Power Dissipation (Note 1a) 0.96 Power Dissipation (Note 1b) 0.69 Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

Thermal Characteristics

θJC

θJA

Thermal Resistance, Junction to Case 60 Thermal Resistance, Junction to Ambient (Note 1a) 130

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

.862 FDC8602 SSOT-6 7 ’’ 8

mm 3000 units

FDC8602 Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage I Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current V Gate to Source Leakage Current V

= 250 μA, VGS = 0 V 100 V

= 250 μA, referenced to 25 °C 73 mV/°C

= 80 V, V

= ±20 V, V

= 0 V1μA

= 0 V ±100nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, I Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance V

= 250 μA, referenced to 25 °C -8 mV/°C

= 10 V, ID = 1.2 A 285 350

= 6 V, ID = 0.9 A 409 575

= 10 V, ID = 1.2 A, T

= 10 V, ID = 1.2 A1.3S

= 250 μA23.24V

= 125 °C 489 600

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 17 25 pF Reverse Transfer Capacitance 0.8 5 pF Gate Resistance 1.6 Ω

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time Rise Time 1.7 10 ns Turn-Off Delay Time 5.4 11 ns Fall Time 2.3 10 ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 0.4 nC Gate to Drain “Miller” Charge 0.4 nC

= 50 V, VGS = 0 V,

f = 1MHz

= 50 V, ID = 1.2 A,

= 10 V, R

= 0 V to 10 V

= 0 V to 5 V0.61nC

GEN

= 6 Ω

= 1.2 A

= 50 V,

53 70 pF

3.5 10 ns

1.2 2 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

NOTES:

1. R

is the sum of the junction-to-case and case -to-ambie nt ther mal resistan ce where the c ase ther mal referen ce is defi ned as the so lder moun ting su rface of the drai n pins.

θJA

is guaranteed by design while R

θJC

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T

Source-Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 12 21 nC

is determined by the user's board design.

θCA

130 °C/W when mounted on a 1 in2 pad of 2 oz copper

= 25 °C; N-ch: L = 3 mH, IAS = 1 A, VDD = 100 V, VGS = 10 V.

= 0 V, IS = 1.2 A (Note 2) 0.86 1.3 V

= 1.2 A, di/dt = 100 A/μs

27 43 ns

180 °C/W when mounted on a mi n im u m p ad o f 2 o z co ppe r

FDC8602 Dual N-Channel PowerTrench

012345

VGS = 8 V

VGS = 7 V

, DRAIN TO SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

VGS = 6 V

VGS = 5 V

VGS = 10 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

012345

VGS = 10 V

VGS = 5 V

VGS = 6 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

VGS = 7 V

VGS = 8 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 1.2 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

, JUNCTION TEMPERATURE (

5678910

300

600

900

1200

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = 125 oC

= 25

ID = 1.2 A

DS(on)

, DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

VGS, GATE TO SOURCE VO L TAGE (V)

2345678

TJ = 150 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Nor m aliz e d On- R esis t ance

vs Drain Current and Gate Voltage

MOSFET

Fi gure 3. Normali zed On Resi sta nce

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

FDC8602 Dual N-Channel PowerTrench

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID = 1.2 A

VDD = 75 V

= 25 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 50 V

0.1 1 10 100

0.1

500

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.01 0.1 1 10

0.1

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

, AVALANCHE CURRENT (A)

0.1 1 10 100 400

0.005

0.01

0.1

100 us

1 ms

1 s

10 ms

10 s

100 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS A REA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 180

C/W

= 25

-4

-3

-2

-1

110

100 1000

0.5

100

VGS = 10 V

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE R

θJA

= 180 oC/W

= 25 oC

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

Capa c i tance v s Drai n

to Source Voltage

MOSFET

Figure 9.

Unclam p e d I nductiv e

Switching Capability

Figure 10.

Operating Area

Figure 11. Single Pulse Maximum Power Dissipation

Forward Bias Safe

FDC8602 Dual N-Channel PowerTrench

-4

-3

-2

-1

110

100 1000

0.005

0.01

0.1

SINGLE PULSE R

θJA

= 180 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 12.

= 25 °C unless otherwise noted

Junction-to-Ambient Transient Thermal Response Curve

MOSFET

FDC8602 Dual N-Channel PowerTrench

Dimensional Outline and Pad Layout

MOSFET

TRADEMARKS

™

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semi conductor and/or its glob al subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ Auto-SPM™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™

FlashWriter FPS™ F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™ PowerTrench PowerXS™

Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™

SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise The Right Technology for Y our Success™

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDC8602 Dual N-Channel PowerTrench

MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All ma nufactures of semiconductor products are exper iencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many proble ms su ch as loss of brand repu tation , substa ndard pe rfo rmance, f aile d application, and increased cost of production and manufacturing delays. Fairchild is takin g stron g measures to protect ourselves and our customers from th e proliferation of counterfeit parts. Fairchild str ongly encourages customers t o purchase Fairchild par ts either d irectly from Fairchild o r from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping t his practice by buying direct or from authorized distributor s.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to ca use the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications fo r product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I55

FDC8602 Rev.C

Fairchild FDC8602 service manual

Specifications and Main Features

Frequently Asked Questions

User Manual