Fairchild FDC8601 service manual

FDC8601

SuperSOTTM -6

G

S

D

D

D

D

Pin 1

1

2

3

6

5

4

D

D

G

D

D

S

N-Channel Power Trench® MOSFET

100 V, 2.7 A, 109 mΩ

Features

 Max r
 Max r
 High performance trench technology for extremely low r
 High power and current handling capability in a widely used

surface mount package

 Fast switching speed
 100% UIL Tested
 RoHS Compliant

= 109 mΩ at VGS = 10 V, ID = 2.7 A

DS(on)

= 176 mΩ at VGS = 6 V, ID = 2.1 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for
ruggedness.

Applications

 Load Switch
 Synchronous Rectifier
 Primary Switch

June 2010

®

process that has

r

, switching performance and

DS(on)

FDC8601 N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. C

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 2.7

-Pulsed 12
Single Pulse Avalanche Energy (Note 3) 13 mJ
Power Dissipation (Note 1a) 1.6
Power Dissipation (Note 1b) 0.8
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 30
Thermal Resistance, Junction to Ambient (Note 1a) 78

.861 FDC8601 SSOT-6 7 ’’ 8 mm 3000 units

= 25 °C unless otherwise noted

A

1

A

W

°C/W

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FDC8601 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

ΔV

GS(th)

ΔT

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 70 mV/°C

I

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 3.0 4.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 10 V, ID = 2.7 A 5 S

I

= 250 μA, referenced to 25 °C -8 mV/°C

D

V

= 10 V, ID = 2.7 A 86 109

GS

= 6 V, ID = 2.1 A 119 176

GS

= 10 V, ID = 2.7 A, TJ = 125 °C 144 183

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 46 65 pF
Reverse Transfer Capacitance 2.2 5 pF

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

155 210 pF

Gate Resistance 0.9 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 1.3 10 ns
Turn-Off Delay Time 7.6 16 ns

= 50 V, ID = 2.7 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Fall Time 2 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 0.9 nC

= 0 V to 5 V 1.7 3 nC

GS

V

DD

I

= 2.7 A

D

= 50 V

Gate to Drain “Miller” Charge 0.8 nC

4.5 10 ns

3 5 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

θJA

is guaranteed by design while R

R

θJC

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. Starting T

©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. C

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 21 34 nC

is determined by the user's board design.

θCA

= 25 oC, L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V.

J

GS

= 2.7 A, di/dt = 100 A/μs

I

F

a. 78 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

= 0 V, IS = 2.7 A (Note 2) 0.85 1.3 V

34 54 ns

b.175 °C/W when mounted on
a minimum pad of 2 oz copper

2

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FDC8601 N-Channel Power Trench

012345

0

3

6

9

12

VGS = 6.5 V

VGS = 5.5 V

VGS = 10 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 5 V

VGS = 6 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

036912

0

1

2

3

4

5

VGS = 5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 6 V

VGS = 6.5 V

VGS = 5.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 2.7 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TE MPERATURE (

o

C)

45678910

0

100

200

300

400

500

TJ = 125 oC

ID = 2.7 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

2345678

0

3

6

9

12

TJ = 25 oC

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

®

MOSFET

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. C

Figure 5. Transfer Characteristics

Figure 4.

On-Res istance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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