Fairchild FDC658AP service manual
FDC658AP
Single P-Channel Logic Level PowerTrench® MOSFET
-30V, -4A, 50m:
FDC658AP Single P-Channel Logic Level PowerTrench
November 2011
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild's advanced PowerTrench process. It has been
optimized for battery power management applications.
Applications
Battery management
Load switch
Battery protection
DC/DC conversion
Features
Max r
Max r
Low Gate Charge
High performance trench technology for extremely low
r
DS(on)
RoHS Compliant
= 50 m: @ VGS = -10 V, ID = -4A
DS(on)
= 75 m: @ VGS = -4.5 V, ID = -3.4A
DS(on)
S
D
D
G
D
- Pulsed
D
TM
-6
= 25°C unless otherwise noted
A
PIN 1
SuperSOT
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain-Source Voltage -30 V
Gate-Source Voltage r25 V
Drain Current - Continuous -4
Maximum Power dissipation 1.6
Operating and Storage Junction Temperature Range -55 to +150 °C
1
2
3
(Note 1a)
(Note 1a)
(Note 1b)
6
5
4
-20
0.8
®
MOSFET
A
W
Thermal Characteristics
R
TJA
R
TJC
Thermal Resistance, Junction-to-Ambient 78 °C/W
Thermal Resistance, Junction-to-Case 30 °C/W
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
.58A FDC658AP 7inch 8mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDC658AP Rev. B1
www.fairchildsemi.com1
FDC658AP Single P-Channel Logic Level PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BV
DSS
'T
J
I
DSS
I
GSS
On Characteristics
V
GS(TH)
'V
GS(TH)
'T
J
r
DS(on)
I
D(ON)
g
FS
Drain-Source Breakdown Voltage ID = -250PA, VGS = 0V -30 V
Breakdown Voltage Temperature
Coefficient
ID = -250PA,
Referenced to 25°C
-22 mV/°C
Zero Gate Voltage Drain Current VGS = 0V, VDS = -24V -1 PA
Gate-Body Leakage VGS = r25V, VDS = 0V r100 nA
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = -250PA-1-1.8-3V
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source On-Resistance
On-State Drain Current VGS = -10V, VDS = -5V -20 A
Forward Transconductance ID = -4A, VDS = -5V 8.4 S
ID = -250PA,
Referenced to 25°C
I
= -4A, VGS = -10V 44 50
D
= -3.4A, VGS = -4.5V 67 75
I
D
= -4A, VGS = -10V,
I
D
= 125°C
T
J
4 mV/°C
60 70
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 126 pF
Reverse Transfer Capacitance 61 pF
V
= -15V, VGS = 0V,
DS
f = 1MHz
470 pF
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time 12 22 ns
Turn-Off Delay Time 16 29 ns
= -15V, ID = -1A
V
DD
= -10V, R
V
GS
GEN
= 6:
714ns
Turn-Off Fall Time 6 12 ns
Total Gate Charge
Gate-Source Charge 2.1 nC
Gate-Drain Charge 2 nC
= -15V, ID = -4A,
V
DS
= -5V
V
GS
6 8.1 nC
m:
®
MOSFET
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1: R
TJA
the drain pins. R
Scale 1: 1 on letter size paper
2: Pulse Test: Pulse Width < 300 Ps, Duty Cycle < 2.0%
FDC658AP Rev. B1
Maximum Continuous Drain-Source Diode Forward Current -1.3 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = -1.3 A (Note 2) -0.77 -1.2 V
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
TJC
o
C/W when mounted on a
a) 78
2
1 in
pad of 2 oz copper
is determined by the user's board design.
TCA
b) 156oC/W whe mounted on a
minimum pad of 2 oz copper
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