Fairchild FDC642P service manual
FDC642P
Single P-Channel 2.5V Specified PowerTrench® MOSFET
-20 V, -4.0 A, 65 mΩ
Features
Max r
Max r
Fast switching speed
Low gate charge (11nC typical)
High performance trench technology for extremely low r
SuperSOTTM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1 mm thick)
Termination is Lead-free and RoHS Compliant
= 65 mΩ at VGS = -4.5 V, ID = -4.0 A
DS(on)
= 100 mΩ at VGS = -2.5 V, ID = -3.2 A
DS(on)
DS(on)
General Description
This P-Channel 2.5V specified MOSFET is produced using
Fairchild’s advanced Power
especially tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint for applications where the
larger packages are impractical.
Trench® process that has been
Applications
Load switch
Battery protection
Power management
FDC642P Single P-Channel 2.5V Specified PowerTrench
January 2010
D
D
G
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Thermal Characteristics
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
Drain to Source Voltage -20 V
Gate to Source Voltage ±8 V
-Continuous TA = 25°C (Note 1a) -4.0
-Pulsed -20
Power Dissipation ( Note 1a) 1.6
Power Dissipation (Note 1b) 0.8
Operating and Storage Junction Temperature Range -55 to + 150 °C
Thermal Resistance, Junction to Ambient (Note 1a) 78 °C/W
.642 FDC642P SSOT-6
= 25°C unless otherwise noted
C
TM
7 ’’ 8 mm 3000 units
D
D
S
®
MOSFET
A
W
©2010 Fairchild Semiconductor Corporation
FDC642P Rev.C2
1
www.fairchildsemi.com
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage I
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current V
= -250 µA, VGS = 0 V-20 V
D
I
= -250 µA, referenced to 25°C -13 mV/°C
D
= -16 V, V
DS
= ±8 V, V
GS
= 0 V-1µA
GS
= 0 V ±10 µA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, I
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance V
I
= -250 µA, referenced to 25°C 2.5 mV/°C
D
= -4.5 V, ID = -4.0 A 45 65
V
GS
V
= -2.5 V, ID = -3.2 A 55 100
GS
= -4.5 V, ID = -4.0 A,
V
GS
T
= 125°C
J
= -5 V, ID = -4.0 A15S
DS
= -250 µA -0.4 -0.6 -1.5 V
D
62 90
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 110 150 pF
Reverse Transfer Capacitance 95 145 pF
= -10 V, VGS = 0 V,
V
DS
f = 1 MHz
700 925 pF
FDC642P Single P-Channel 2.5V Specified PowerTrench
mΩ
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 714ns
Turn-Off Delay Time 120 190 ns
Fall Time 52 83 ns
Total Gate Charge
Gate to Source Charge 1.1 nC
Gate to Drain “Miller” Charge 3.0 nC
612ns
= -10 V, ID = -1 A,
V
DD
V
= -4.5 V, R
GS
= -10 V, ID = -4 A
V
DD
V
= --4.5 V
GS
GEN
= 6 Ω
11 16 nC
Drain-Source Diode Characteristics
I
S
V
SD
Notes:
1: R
θJA
R
θJC
a. 78
b. 156°C/W when mounted on a minimum pad of 2 oz copper.
2: Pulse Test: Pulse Width<300 us, Duty Cycle<2.0%.
Maximum Continuous Drain-Source Diode Forward Current -1.3 A
Source-Drain Diode Forward Voltage V
is the sum of the junction-to-case and ca se-to-ambient thermal resistan ce where the case th ermal reference is defined as t he solder mountin g surface of the d rain pins.
is guaranteed by design while R
°C/W when mounted on a 1 in2 pad of 2 oz copper.
is determined by the user’s board design.
θCA
= 0 V, IS = -1.3 A (Note 2) -0.7 -1.2 V
GS
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDC642P Rev.C2
2
www.fairchildsemi.com
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