Fairchild FDC6401N service manual
FDC6401N
FDC6401N
Dual N-Channel 2.5V Specified PowerTrench MOSFET
October 2001
General Description
This Dual N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
• Battery Protection
• Power Management
Features
• 3.0 A, 20 V. R
• Low gate charge (3.3 nC)
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
= 70 mΩ @ VGS = 4.5 V
DS(ON)
R
= 95 mΩ @ VGS = 2.5 V
DS(ON)
D2
D1
S1
4
5
3
2
G2
SuperSOT -6
TM
S2
G1
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
6
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 3.0 A
– Pulsed 12
Power Dissipation for Single Operation (Note 1a) 0.96
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range –55 to +150
±12
0.9
0.7
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 130
Thermal Resistance, Junction-to-Case (Note 1) 60
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.401 FDC6401N 7’’ 8mm 3000 units
2001 Fairchild Semiconductor Corporation
°C/W
°C/W
FDC6401N Rev C (W)
Electrical Characteristics T
FDC6401N
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C 13 mV/°C
20 V
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V –100 nA
Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V 100 nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 3.0 A
VGS = 2.5 V, ID = 2.5 A
VGS = 4.5 V, ID = 3.0 A,TJ=125°C
0.5 0.9 1.5 V
–3 mV/°C
50
66
71
On–State Drain Current VGS = 4.5 V, VDS = 5 V 12 A
Forward Transconductance VDS = 5V, ID = 3.0 A 10 S
70
95
106
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 324 pF
Output Capacitance 82 pF
Reverse Transfer Capacitance
VDS = 10 V, V
f = 1.0 MHz
GS
= 0 V,
42 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 5 10 ns
Turn–On Rise Time 7 14 ns
Turn–Off Delay Time 13 23 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 3.3 4.6 nC
Gate–Source Charge 0.95 nC
Gate–Drain Charge
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R
GEN
= 6 Ω
VDS = 10 V, ID = 3.0 A,
VGS = 4.5 V
1.6 3 ns
0.7 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 0.8 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
VGS = 0 V, IS = 0.8 A (Note 2) 0.7 1.2 V
is determined by the user's board design.
µA
mΩ
a) 130 °C/W when
mounted on a 0.125
in2 pad of 2 oz.
copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 140 °C/W when
mounted on a .004 in
pad of 2 oz copper
2
c) 180 C°/W when mounted on a
minimum pad.
FDC6401N Rev C (W)
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