Fairchild FDC638P service manual
FDC638P
FDC638P
P-Channel 2.5V PowerTrench Specified MOSFET
September 2001
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance
These devices are well suited for battery power
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
• –4.5 A, –20 V. R
R
• Low gate charge (10 nC typical)
• High performance trench technology for extremely
low R
DS(ON)
• SuperSOT ™ –6 package: small footprint (72%
= 48 mΩ @ VGS = –4.5 V
DS(ON)
= 65 mΩ @ VGS = –2.5 V
DS(ON)
smaller than standard SO-8; low profile (1mm thick)
S
SuperSOT -6
D
D
TM
pin 1
G
D
D
1
2
3
3
6
5
4
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage –20 V
DSS
V
Gate-Source Voltage ±8 V
GSS
ID Drain Current – Continuous (Note 1a) –4.5 A
– Pulsed –20
Power Dissipation for Single Operation (Note 1a) 1.6 PD
(Note 1b)
TJ, T
Operating and Storage Junction Temperature Range –55 to +150 °C
STG
0.8
W
Thermal Characteristics
R
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
θJA
R
Thermal Resistance, Junction-to-Case (Note 1) 30
θJC
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2001 Fairchild Semiconductor Corporation FDC638P Rev F1 (W)
.638 FDC638P 7’’ 8mm 3000 units
FDC638P
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
ID = –250 µA,Referenced to 25°C –14 mV/°C
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.8 –1.5 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA,Referenced to 25°C
VGS = –4.5 V, ID = –4.5 A
VGS = –2.5 V, ID = –3.8 A
VGS = –4.5 V, ID = –4.5 TJ=125°C
3 mV/°C
39
48
52
54
m Ω
65
72
On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 A
gFS Forward Transconductance VDS = –10 V, ID = –4.5 A 15 S
Dynamic Characteristi cs
C
Input Capacitance 1160 pF
iss
C
Output Capacitance 195 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = –10 V, V
f = 1.0 MHz
= 0 V,
GS
105 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 12 22 ns
d(on)
tr Turn–On Rise Time 9 18 ns
t
Turn–Off Delay Time 33 53 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 10 14 nC
Qgs Gate–Source Charge 2.2 nC
Qgd Gate–Drain Charge
VDD = –5 V, ID = –1 A,
VGS = –4.5 V, R
GEN
= 6 Ω
VDS = –10 V, ID = –4.5 A,
VGS = –4.5 V
12 22 ns
1.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A
VSD
Notes:
1. R
is the sum of the ju nction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
a) 78°C/W when
mounted on a 1in2 pad
of 2 oz copper
VGS = 0 V, IS = –1.3 A (Note 2) –0.73 –1.2 V
FDC638P Rev F (W)
b) 156°C/W when mounted
on a minimum pad of 2 oz
copper
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