Fairchild FDC637BNZ service manual
tm
FDC637BNZ
N-Channel 2.5V Specified PowerTrench® MOSFET
20V, 6.2A, 24mΩ
Features
Max r
Max r
Fast switching speed
Low gate charge (8nC typical)
High performance trench technology for extremely low r
SuperSOT™–6 package: small footprint (72% smaller than
standard SO-8; low profile (1mm thick)
HBM ESD protection level > 2kV typical (Note 3)
Manufactured using green packaging material
Halide-Free
RoHS Compliant
= 24mΩ at VGS = 4.5V, ID = 6.2A
DS(on)
= 32mΩ at VGS = 2.5V, ID = 5.2A
DS(on)
DS(on)
General Description
This N-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint compared with bigger SO-8
and TSSOP-8 packages.
Applications
DC - DC Conversion
Load switch
Battery Protection
September 2007
®
process
FDC637BNZ N-Channel 2.5V Specified PowerTrench
®
MOSFET
S
D
D
G
D
Pin 1
SuperSOTTM -6
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage 20 V
Gate to Source Voltage ±12 V
Drain Current -Continuous TA = 25°C (Note 1a) 6.2
-Pulsed 20
Power Dissipation TA = 25°C (Note 1a) 1.6
Power Dissipation T
Operating and Storage Junction Temperature Range –55 to +150 °C
D
= 25°C unless otherwise noted
A
= 25°C (Note 1b) 0.8
A
D
1
D
2
G
3
D
6
D
5
S
4
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 78
Thermal Resistance, Junction to Ambient (Note 1b) 156
Package Marking and Ordering Information
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
.637Z FDC637BNZ SSOT6 7’’ 8mm 3000 units
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
1
www.fairchildsemi.com
FDC637BNZ N-Channel 2.5V Specified PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 20 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 16V, V
Gate to Source Leakage Current VGS = ±12V, V
ID = 250µA, referenced to 25°C 10 mV/°C
= 0V 1 µA
GS
= 0V ±10 µA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 0.6 0.8 1.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDD = 5V, ID = 6.2A 27 S
ID = 250µA, referenced to 25°C -3 mV/°C
VGS = 4.5V, ID = 6.2A 21 24
VGS = 4.5V, ID = 6.2A, TJ = 125°C 30 41
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 160 215 pF
Reverse Transfer Capacitance 115 175 pF
VDS = 10V, VGS = 0V,
f = 1MHz
670 895 pF
Gate Resistance f = 1MHz 2.1 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 6 12 ns
Turn-Off Delay Time 22 36 ns
VDD = 10V, ID = 6.2A
VGS = 4.5V, R
GEN
= 6Ω
8 16 ns
Fall Time 6 12 ns
Total Gate Charge
Gate to Source Gate Charge 1.3 nC
Gate to Drain “Miller” Charge 2.2 nC
V
= 4.5V, V
GS
ID = 6.2A
DD
= 10V,
8 12 nC
mΩVGS = 2.5V, ID = 5.2A 26 32
®
MOSFET
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
1. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
Maximum Continuous Drain-Source Diode Forward Current 1.3 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 5 10 nC
a. 78°C/W when mounted on a
2
1 in
pad of 2 oz copper.
= 0V, IS = 1.3A (Note 2) 0.7 1.2 V
GS
IF = 6.2A, di/dt = 100A/µs
2
15 27 ns
is guaranteed by design while R
θJC
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
θJA
www.fairchildsemi.com
Loading...