Fairchild FDC637AN service manual

FDC637AN

Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET

FDC637AN

November 1999

General Description

This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.

These devices have been designed to offer exceptional
power dissipation in a very small footprint compared
with bigger SO-8 and TSSOP-8 packages.

Applications

• DC/DC converter

• Load switch

• Battery Protection

S

D

D

G

SuperSOT -6

TM

Absolute Maximum Ratings

D

D

TA = 25°C unless otherwise noted

Features

• 6.2 A, 20 V. R

R

= 0.024 Ω @ V

DS(on)

= 0.032 Ω @ V

DS(on)

= 4.5 V

GS

= 2.5 V

GS

• Fast switching speed.

• Low gate charge (10.5nC typical).

• High performance trench technology for extremely

low R

• SuperSOT

than standard SO-8); low profile (1mm thick).

.

DS(ON)

TM

-6 package: small footprint (72% smaller

1

2

3

6

5

4

Symbol Parameter FDC637AN Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed 20
Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range -55 to +150

(Note 1a)

(Note 1a)
(Note 1b)

8

±

6.2 A

1.6 W

0.8

Thermal Characteristics

R

θ

JA

R

θ

JC

Thermal Resistance, Junction-to-Ambient
Ther mal Resist ance, Junction-to-Case

(Note 1a)
(Note 1)

78
30

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.637 FDC637AN 7’’ 8mm 3000 units

1999 Fairchild Semiconductor Corporation

V

C

°

C/W

°

C/W

°

FDC637AN, Rev. C

FDC637AN

Electrical Characteristics

Symbol
Off Characteri st ics

BV

DSS

BV

∆

T

∆

I

Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

DSS

Coefficient

J

Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA

Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA

On Characteristics

V

Gate Threshold Voltage

GS(th)

∆
∆

R

I

D(on)

V

GS(th)

T

DS(on)

Gate Threshold Voltage
Temperature Coefficient

J

Static Drain-Source

On-Resistance

On-State Drain Current VGS = 4.5 V, VDS = 5 V 10 A

Parameter

(Note 2)

TA = 25°C unless otherwise noted

Test Conditions

V

= 0 V, ID = 250 µA

GS

= 250µA, Reference d to 25°C

I

D

V

= VGS, ID = 250 µA

DS

I

=250µA,Referenced to 125°C

D

VGS = 4.5 V,ID = 6.2 A
V

= 4.5 V,ID = 6.2 A,TJ=125°C

GS

V

= 2.5 V, ID = 5.2 A

GS

Min

Typ Max Units

20 V

14

mV/°C

A

µ

0.4 0.82 1.5 V

-3

0.019

0.028

0.025

0.024

0.041

0.032

mV/°C

Ω

gFS Forward Transconductance VDS = 5 V, ID = 6.2 A 7.4 S

Dynamic Characteristics

C

Input Capacitance 1125 pF

iss

C

Output Capacitance 290 pF

oss

C

Reverse Transfer Capacitance

rss

Switching Characteristics

t

Turn-On Delay Time 9 18 ns

d(on)

tr Turn-On Rise Time 13 24 ns
t

Turn-Off Delay Time 26 42 ns

d(off)

tf Turn-Off Fall Time
Qg Total Gate Charge 10.5 16 nC
Qgs Gate-Source Charge 1.5 nC
Qgd Gate-Drain Charge

Drain-Source Diode Characteristics and Maximum Ratings

V

= 10 V, VGS = 0 V,

DS

f = 1.0 MHz

145 pF

(Note 2)

V

= 10 V, ID = 1 A,

DD

V

= 4.5 V, R

GS

GEN

= 6 Ω

11 20 ns

V

= 5 V, ID = 6.2 A,

DS

V

= 4.5 V

GS

2.2 nC

IS Maximum Continuous Drain-Source Diode Forward Current 1.3 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A

0.7 1.2 V

(Note 2)

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface

θJA

of the drain pins. R

a) 78° C/W when mounted on a 1.0 in2 pad of 2 oz. copper.
b) 156° C/W when mounted on a minimum pad of 2 oz.copper.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

FDC637AN, Rev. C