Fairchild FDC6331L service manual

FDC6331L
Integrated Load Switch
General Description
This device is particularly suited for compact power management in portable electronic equipment where
2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2) in one tiny SuperSOT package.
Applications
x Load switch
x Power management
TM
-6
August 2001
April 2007
Features
x –2.8 A, –8 V. R
x Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
x High performance trench technology for extremely
low R
DS(ON)
= 55 m: @ VGS = –4.5 V
DS(ON)
R
= 70 m: @ VGS = –2.5 V
DS(ON)
= 100 m:@ VGS = –1.8 V
R
DS(ON)
FDC6331L
tm
D2
S1
D1
SuperSOT -6
TM
Pin 1
G1
G2
S2
Vin,R1
ON/O FF
R1,C1
SuperSOT™-6
Absolute Maximum Ratings T
Q2
4
5
Q1
6
See Application Circuit
=25oC unless otherwise noted
A
3
2
1
Vout,C1
Vout,C1
R2
Equivalent Circuit
IN OUT
+–
V
DR OP
ON/OFF
Symbol Parameter Ratings Units
V
V
I
Load
IN
ON/OFF
Maximum Input Voltage r 8V
High level ON/OFF voltage range –0.5 to 8 V
Load Current – Continuous (Note 1) 2.8 A
– Pulsed 9
P
D
TJ, T
STG
Maximum Power Dissipation (Note 1) 0.7 W
Operating and Storage Junction Temperature Range –55 to +150 qC
Thermal Characteristics
R
TJA
R
TJC
Thermal Resistance, Junction-to-Ambient (Note 1) 180
Thermal Resistance, Junction-to-Case (Note 1) 60
qC/W
qC/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.331 FDC6331L 7’’ 8mm 3000 units
2007 Fairchild Semiconductor Corporation FDC6331L Rev D
FDC6331L
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
I
Load
I
FL
I
RL
IN
Vin Breakdown Voltage V
= 0 V, ID = –250 PA8 V
ON/OFF
Zero Gate Voltage Drain Current VIN = 6.4 V, V
Leakage Current, Forward V
Leakage Current, Reverse V
= 0 V, VIN = 8 V –100 nA
ON/OFF
= 0 V, VIN = –8 V 100 nA
ON/OFF
= 0 V –1 PA
ON/OFF
On Characteristics (Note 2)
V
ON/OFF (th)
R
DS(on)
R
DS(on)
Gate Threshold Voltage VIN = V Static Drain–Source
On–Resistance (Q2)
Static Drain–Source On–Resistance (Q1)
VGS = –4.5 V, ID = –2.8A
= –2.5 V, ID = –2.5 A
V
GS
= –1.8 V, ID = –2.0 A
V
GS
VGS = 4.5 V, ID = 0.4A
= 2.7 V, ID = 0.2 A
V
GS
, ID = –250 PA 0.4 0.9 1.5 V
ON/OFF
34 45 64
3.1
3.8
55 70
100
4 5
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
TJA
surface of the drain pins. R
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
Maximum Continuous Drain–Source Diode Forward Current –0.6 A
Drain–Source Diode Forward
V
= 0 V, IS = –0.6 A (Note 2) –1.2 V
ON/OFF
Voltage
is the sum of the junction-to- case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting
is guar anteed by design while R
TJC
is determined by the user’s board design.
TJA
m:
:
FDC6331L Load Switch Application Circuit
R1
Q1
Q2
OUT
C1
LOAD
IN
ON/OFF
R2
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030.
FDC6331L Rev D
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