Fairchild FDC6327C service manual

FDC6327C

Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET

FDC6327C

July 2000

General Description

These N & P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low gate
charge for superior switching performance.

These devices have been designed to offer exceptional power
dissipation in a very small footprint for applications where
the bigger more expensive SO-8 and TSSOP-8 packages
are impractical.

Applications

• DC/DC converter

• Load switch

• Motor driving

D2

S1

D1

G2

SuperSOT -6

TM

S2

G1

Features

• N-Channel 2.7A, 20V . R

R

• P-Channel -1.6A, -20V .R

R

= 0.08Ω @ V

DS(on)

= 0.12Ω @ V

DS(on)

= 0.17Ω @ V

DS(on)

= 0.25Ω @ V

DS(on)

= 4.5V

GS

= 2.5V

GS

= -4.5V

GS

= -2.5V

GS

• Fast switching speed.

• Low gate charge.

• High performance trench technology for extremely

low R

• SuperSOT

than SO-8); low profile (1mm thick).

.

DS(ON)

TM

-6 package: small footprint (72% smaller

4

5

6

3

2

1

Absolute Maximum Ratings

TA = 25°C unless otherwise noted

Symbol Parameter N-Channel P-Channel Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 20 -20 V
Gate-Source Voltage
Drain Current - Continuous

- Pulsed 8 -8

Power Dissipation

Operating and Storage Junction Temperat ure Range -55 to +150

(Note 1a)

(Note 1a)
(Note 1b)

(Note 1c)

8

±

2.7 -1.9 A

0.96 W

0.9

0.7

8V

±

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1)

130

60

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.327 FDC6327C 7” 8mm 3000

1999 Fairchild Semiconductor Corporation

C

°

C/W

°

C/W

°

FDC6327C, Rev. E

FDC6327C

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions TypeMin TypMax Units

Off Characteristics

BV

Drain-Source Breakdown

DSS

Voltage

BV

∆
∆

I

DSS

Breakdown Voltage

DSS

Temperature Coefficient

T

J

Zero Gate Voltage Drain
Current

I

GSSF

I

GSSR

Gate-Body Leakage, Forward VGS = 8 V, VDS = 0 V All 100 nA
Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V All -100 nA

On Characteristics

V

GS(th)

GS(th)

V

∆
∆

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage VDS = VGS, ID = 250 µA

Gate Threshold Voltage
Temperature Coefficient

T

J

Static Drain-Source
On-Resistance

On-State Drain Current VGS = 4.5 V, VDS = 5 V

Forward Transconductance VDS = 5 V, ID = 2.7 A

(Note 2)

VGS = 0 V, ID = 250 µA

= 0 V, ID = - 250 µA

V

GS

ID = 250 µA, Referenced to 25°C

= - 250 µA, Referenced to 25°C

I

D

VDS = 16 V, VGS = 0 V
V

= -16 V, VGS = 0 V

DS

= VGS, ID = -250 µA

V

DS

ID = 250 µA, Referenced to 25°C

= - 250 µA, Referenced to 25°C

I

D

VGS = 4.5 V, ID = 2.7 A
V

= 4.5 V, ID = 2.7 A, TJ = 125°C

GS

= 2.5 V, ID = 2.2 A

V

GS

V

= -4.5 V, ID = -1.6 A

GS

V

= -4.5 V, ID = -1.6 A, TJ = 125°C

GS

= -2.5 V, ID = -1.3 A

V

GS

V

= -4.5 V, VDS = -5 V

GS

V

= -5 V, ID = -1.9 A

DS

N-Ch
P-Ch20-20

N-Ch
P-Ch

N-Ch
P-Ch

N-Ch
P-Ch

0.4

-0.4

N-Ch
P-Ch

N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch

N-Ch
P-Ch8-8
N-Ch
P-Ch

12

-19

0.9

-0.9

-2.1

2.3

0.069

0.094

0.093

0.141

0.203

0.205

7.7

4.5

1.5

-1.5

0.08

0.13

0.12

0.17

0.27

0.25

V

mV/°C

1

A

µ

-1

V

mV/°C

Ω

A

S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance N-Ch

Output Capacitance N-Ch

Reverse Transfer Capacitance

N-Channel
V

= 10 V, VGS = 0 V, f = 1.0 MHz

DS

P-Channel
V

= 10 V, VGS = 0 V, f = 1.0 MHz

DS

P-Ch

P-Ch
N-Ch
P-Ch

325
315

75
65
35
24

pF

pF

pF

FDC6327C, Rev. E

FDC6327C

yp

Electrical Characteristics

(continued)

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min T

(Note 2)

Switching Characteristics

t

t

t

t

Q

Q

Q

d(on)

r

d(off)

f

g

gs

gd

Turn-On Delay Time N-Ch

Turn-On Rise Time N-Ch

Turn-Off Delay Time N-Ch

Turn-Off Fall Time

Total Gate Charge N-Ch

Gate-Source Charge N-Ch

Gate-Drain Charge

N-Channel
V

= 10 V, ID = 1 A,

DD

= 4.5V, R

V

GS

GEN

= 6

Ω

P-Channel

= -10 V, ID = -1 A,

V

DD

V

= -4.5 V, R

GS

GEN

= 6

Ω

N-Channel
V

= 10 V, ID = 2.7 A, VGS = 4.5V

DS

P-Channel
V

= -10 V, I

= -1.9 A,V

= -4.5V

P-Ch

P-Ch

P-Ch
N-Ch
P-Ch

P-Ch

P-Ch
N-Ch
P-Ch

5
7

9
14
12
14

3

3

3.25

2.85

0.65

0.68

0.90

0.65

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:
1: R

θJA

R

θJC

equally.

Maximum Continuous Drain-Source Diode Forward Current N-Ch

P-Ch
Drain-Source Diode Forward
Voltage

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R

is determined by the user's board design. Both devices are assumed to be operating and sharing the dissipated heat energy

θJA

VGS = 0 V, IS = 0.8 A
VGS = 0 V, IS = - 0.8 A

(Note 2)

(Note 2)

N-Ch

P-Ch

0.76

-0.79

Max Units

1514ns

1825ns

2225ns

9

ns

9

4.5

nC

4.0
nC

nC

0.8

-0.8

1.2

-1.2

A

V

a) 130 °C/W when

mounted on a 0.125 in
pad of 2 oz. copper.

Scale 1 : 1 on letter size paper
2: Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

2

b) 140 °C/W when

mounted on a 0.005 in
pad of 2 oz. copper.

2

c) 180 °C/W when

mounted on a 0.0015 in
pad of 2 oz. copper.

2

FDC6327C, Rev. E