Fairchild FDC6306P service manual

FDC6306P

Dual P-Channel 2.5V Specified PowerTrench  MOSFET

FDC6306P

February 1999

General Description

These P-Channel 2.5V specified MOSFET s are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain low gate charge for
superior switching performance.

These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.

Applications

• Load switch

• Battery protection

• Power management

D2

S1

D1

G2

SuperSOT -6

TM

Absolute Maximum Ratings

S2

G1

TA = 25°C unless otherwise noted

Features

• -1.9 A, -20 V. R

R

= 0.170 Ω @ V

DS(on)

= 0.250Ω @ V

DS(on)

= -4.5 V

GS

= -2.5 V

GS

• Low gate charge (3 nC typical).

• Fast switching speed.

• High performance trench technology for extremely

low R

• SuperSOT

than standard SO-8); low profile (1mm thick).

.

DS(ON)

TM

-6 package: small footprint (72% smaller

4

5

6

3

2

1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous

- Pulsed -5

Power Dissipation for Si ngl e Operat i on

Operating and Storage Junction Temperature Range -55 to +150

(Note 1a)

(Note 1a)
(Note 1b)

(Note 1c)

8V

±

-1.9 A

0.96 W

0.9

0.7

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, J unc tion-to-Ambient
Thermal Resistance, J unc tion-to-Case

(Note 1a)
(Note 1)

130

60

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

306

.

1999 Fairchild Semiconductor Corporation

FDC6306P 7’’ 8mm 3000 units

C

°

C/W

°

C/W

°

FDC6306P Rev. C

FDC6306P

yp

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min T

Off Characteristics

BV

DSS

BV

∆

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-20 V
Breakdown Voltage Temperature

DSS

Coefficient

J

ID = -250 µA, Referenced to 25°C-18 mV/

Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.9 -1.5 V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

ID = -250 µA, Referenced to 25°C3 mV/

VGS = -4.5 V, ID = -1.9 A
V

= -4.5 V, ID = -1.9 A @125°C

GS

V

= -2.5 V, ID = -1.7 A

GS

On-State Drain Current VGS = -4.5 V, VDS =- 5 V -5 A
Forward Transconductance VDS = -5 V, ID = -1.9 A 4 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 441 pF
Output Capacitance 127 pF
Reverse Transfer Capacitance

V

= -10 V, VGS = 0 V,

DS

f = 1.0 MHz

Max Units

0.170

0.127

0.270

0.182

0.250

0.194

67 pF

C

°

A

µ

C

°

Ω

(Note 2)

Switching Characteristics

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn-On Delay Time 6 12 ns
Turn-On Rise Time 9 18 ns
Turn-Off Delay Time 14 25 ns
Turn-Off Fall Time
Total Gate Charge 3 4.2 nC
Gate-Source Charge 0.7 nC
Gate-Drain Charge

V

= -10 V, ID = -1 A,

DD

V

= -4.5 V, R

GS

V

= -10 V, ID = -1.9 A,

DS

V

= -4.5 V

GS

GEN

= 6

Ω

39ns

0.8 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

of the drain pins. R

sharing the dissipated heat energy equally.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current -0.8 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.8 A

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface

θJA

is guaranteed by design while R

θJC

a) 130 °C/W when

mounted on a 0.125 in
pad of 2 oz. copper.

is determined by the user's board design.Both devices are assumed to be operating and

θJA

2

b) 140 °C/W when

mounted on a 0.005 in
pad of 2 oz. copper.

(Note 2)

2

-0.8 -1.2 V

c) 180 °C/W when

mounted on a 0.0015 in
pad of 2 oz. copper.

2

FDC6306P Rev. C