Fairchild FDC6305N service manual

FDC6305N

Dual N-Channel 2.5V Specified PowerTrench

TM

MOSFET

FDC6305N

March 1999

General Description

These N-Channel low threshold 2.5V specified
MOSFET s are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize on-state resistance and
yet maintain low gate charge for superior switching
performance.

Applications

• Load switch

• DC/DC converter

• Motor driving

D2

S1

D1

G2

SuperSOT -6

TM

S2

G1

Features

• 2.7 A, 20 V. R

R

= 0.08 Ω @ V

DS(ON)

= 0.12 Ω @ V

DS(ON)

= 4.5 V

GS

= 2.5 V

GS

• Low gate charge (3.5nC typical).

• Fast switching speed.

• High performance trench technology for extremely

low R

• SuperSOT

than standard SO-8); low profile (1mm thick).

.

DS(ON)

TM

-6 package: small footprint (72% smaller

4

5

6

3

2

1

Absolute Maximum Ratings

TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current - Continuous

- Pulsed 8

Power Dissipation for Single Operat i on

Operating and Storage Junction Temperature Range -55 to +150

(Note 1a)

(Note 1a)
(Note 1b)

(Note 1c)

8V

±

2.7 A

0.96 W

0.9

0.7

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1)

130

60

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.305 FDC6305N 7’’ 8mm 3000 units

1999 Fairchild Semiconductor Corporation

C

°

C/W

°

C/W

°

FDC6305N, Rev. C

FDC6305N

yp

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min T
Off Characteristics

BV

DSS

BV

∆

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA20 V

DSS

Breakdown Voltage Temperature
Coefficient

J

ID = 250 µA, Referenced to 25°C14mV/

Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.4 0.9 1.5 V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

ID = 250 µA, Referenced to 25°C-2.7mV/

VGS = 4.5, ID = 2.7 A
V

= 4.5 ID = 2.7 A, TJ = 125°C

GS

V

= 2.5 V, ID = 2.2 A

GS

On-State Drain Current VGS = 4.5 V, VDS = 5 V 6 A
Forward Transconductance VDS = 5 V, ID = 2.7 A 8 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 310 pF
Output Capacitance 80 pF
Reverse Transfer Capacitance

V

= 10 V, VGS = 0 V,

DS

f = 1.0 MHz

Max Units

0.080

0.060

0.128

0.095

0.120

0.085

40 pF

C

°

A

µ

C

°

Ω

(Note 2)

Switching Characteristics

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn-On Delay Time 5 15 ns
Turn-On Rise Time 8.5 17 ns
Turn-Off Delay Time 11 20 ns
Turn-Off Fall Time
Total Gate Charge 3.5 5 nC
Gate-Source Charge 0.55 nC
Gate-Drain Charge

V

= 10 V, ID = 1 A,

DD

V

= 4.5 V, R

GS

V

= 10 V, ID = 2.7 A,

DS

V

= 4.5 V

GS

GEN

= 6

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

of the drain pins. R

sharing the dissipated heat energy equally.

Scale 1 : 1 on letter size paper

2. Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source D i ode Forward Current 0.8 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.8 A

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface

is guaranteed by design while R

θJC

a) 130 °C/W when

mounted on a 0.125 in
pad of 2 oz. copper.

is determined by the user's board design. Both devices are assumed to be operating and

θCA

2

b) 140 °C/W when

mounted on a 0.005 in
pad of 2 oz. copper.

(Note 2)

2

310ns

0.95 nC

0.77 1.2 V

c) 180 °C/W on a minimum
mounting pad.

FDC6305N, Rev. C