Fairchild FDC602P service manual
FDC602P
FDC602P
P-Channel 2.5V PowerTrench Specified MOSFET
April 2001
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
• Battery management
• Load switch
• Battery protection
Features
• –5.5 A, –20 V R
R
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
= 35 m Ω @ VGS = –4.5 V
DS(ON)
= 50 m Ω @ VGS = –2.5 V
DS(ON)
S
D
D
1
2
6
5
G
SuperSOT -6
TM
D
D
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
3
4
Symbol Parameter Ratings Units
V
Drain-Source Voltage –20 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) –5.5 A
– Pulsed –20
Maximum Power Dissipation (Note 1a) 1.6 W PD
(Note 1b)
TJ, T
Operating and Storage Junction Temperature Range –55 to +150
STG
±12
0.8
°C
V
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
Thermal Resistance, Junction-to-Case (Note 1) 30
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.602 FDC602P 7’’ 8mm 3000 units
2001 Fairchild Semiconductor Corporation FDC602P Rev C(W)
FDC602P
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
–20 V
–14
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –5.5 A
VGS = –2.5 V, ID = –4.5 A
VGS = –4.5 V, ID = –5.5ATJ=125°C
I
On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 A
D(on)
–0.6 –0.9 –1.5 V
3
27
38
38
35
50
53
mV/°C
m Ω
gFS Forward Transconductance VDS = –5 V, ID = –5.5 A 19 S
Dynamic Characteristics
C
Input Capacitance 1456 pF
iss
C
Output Capacitance 300 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = –10 V, V
f = 1.0 MHz
= 0 V,
GS
150 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 15 27 ns
d(on)
tr Turn–On Rise Time 11 20 ns
t
Turn–Off Delay Time 57 91 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 14 20 nC
Qgs Gate–Source Charge 3 nC
Qgd Gate–Drain Charge
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, R
GEN
= 6 Ω
VDS = –10 V, ID = –5.5 A,
VGS = –4.5 V
37 59 ns
5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A
VSD Drain–Source Diode Forward
VGS = 0 V, IS = –1.3 A (Note 2) –0.7 –1.2 V
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
θJA
pins. R
is guaranteed by design while R
θJC
a. 78°C/W w hen mounted on a 1in2 pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
is determined by the user's board design.
θCA
FDC602P Rev C(W)
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