Fairchild FDC5612 service manual

FDC5612

60V N-Channel PowerTrench® MOSFET

FDC5612

December 2004

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.

These MOSFET s feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications.

The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply

designs with higher overall efficiency .

DS(ON)

S

D

D

G

D

SuperSOT

TM

-6

Absolute Maximum Ratings

D

TA = 25°C unless otherwise noted

Features

•

4.3 A, 60 V. R

= 0.055 Ω @ VGS = 10 V

DS(ON)

R

= 0.064 Ω

DS(ON)

@ V

GS

= 6 V

• Low gate charge (12.5nC typical).

• Fast switching speed.

• High performance trench technology for extremely

low R

• SuperSOT

than standard SO-8); low profile (1mm thick).

.

DS(ON)

TM

-6 package: small footprint (72% smaller

1

2

3

6

5

4

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 60 V
Gate-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed 20
Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range -55 to +150

(Note 1a)

(Note 1a)
(Note 1b)

20

±

4.3 A

1.6 W

0.8

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to- Ambient
Thermal Resistance, Junction-to- Case

(Note 1a)
(Note 1)

78
30

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.562 FDC5612 7’’ 8mm 3000 units

©2004 Fairchild Semiconductor Corporation

V

C

°

C/W

°

C/W

°

FDC5612 Rev. C2

FDC5612

yp

)

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min T
Off Characteristics

BV

DSS

BV

∆

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA60 V

DSS

Breakdown Voltage Temperature
Coefficient

J

ID = 250 µA, Referenced to 25°C58mV/

Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = 250 µA22.24V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

ID = 250 µA, Referenced to 25°C-5.5mV/

VGS = 10 V, ID = 4.3 A
V

= 10 V, ID = 4.3 A, TJ = 125°C

GS

V

= 6 V, ID = 4 A

GS

On-State Drain Current VGS = 10 V, VDS = 5 V 10 A
Forward Transconductance VDS = 10 V, ID = 4.3 A 14 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 650 pF
Output Capacitance 80 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

Reverse Transfer Capacitance

Max Units

0.055

0.042

0.094

0.072

0.064

0.048

35 pF

C

°

A

µ

C

°

Ω

(Note 2)

Switching Characteristics

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn-On Delay Time 11 20 ns
Turn-On Rise Time 8 18 ns
Turn-Off Delay Time 19 35 ns
Turn-Off Fall Time
Total Gate Charge 12.5 18 nC
Gate-Source Charge 2.4 nC
Gate-Drain Charge

V

= 30 V, ID = 1 A,

DD

V

= 10 V, R

GS

= 30 V, ID = 4.3 A,

V

DS

V

= 10 V

GS

GEN

= 6

Ω

615ns

2.6 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

qJA

of the drain pins. R

a) 78°C/W when mounted on a 1.0 in2 pad of 2 oz. copper.
b) 156°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%

Maximum Continuous Drain-Source Diode Forward Current 1.3 A
Drain-Source Diode Forward Voltage V

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface

is guaranteed by design while R

qJC

is determined by the user's board design.

qCA

= 0 V, I

= 1.3 A

(Note 2

0.75 1.2 V

FDC5612 Rev. C2