Fairchild FDC365P service manual
tm
FDC365P
P-Channel PowerTrench® MOSFET
-35V, -4.3A, 55mΩ
Features
Max r
Max r
RoHS Compliant
= 55mΩ at VGS = -10V, ID = -4.2A
DS(on)
= 80mΩ at VGS = -4.5V, ID = -3.2A
DS(on)
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
deliver low
superior performance benefit in the applications.
Applications
Inverter
Power Supplies
November 2007
®
technology to
r
and optimized Bvdss capability to offer
DS(on)
FDC365P P-Channel PowerTrench
®
MOSFET
S
D
D
G
Pin 1
SuperSOT
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage -35 V
Gate to Source Voltage ±20 V
-Continuous (Note 1a) -4.3
-Pulsed -20
Power Dissipation (Note 1a) 1.6
Power Dissipation (Note 1b) 0.8
Operating and Storage Junction Temperature Range -55 to +150 °C
D
D
TM
-6
= 25°C unless otherwise noted
C
1
D
D
2
G
3
D
6
5
D
S
4
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 78
Thermal Resistance, Junction to Ambient (Note 1b) 156
Package Marking and Ordering Information
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
.365P FDC365P SSOT6 7’’ 8mm 3000 units
©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C
1
www.fairchildsemi.com
FDC365P P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -35 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = -28V, V
Gate to Source Leakage Current VGS = ±20V, V
ID = -250µA, referenced to 25°C -26 mV/°C
= 0V -1 µA
GS
= 0V ±100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1 -1.8 -3 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = -10V, ID = -4.2A 8.7 S
ID = -250µA, referenced to 25°C 5.0 mV/°C
VGS = -10V, ID = -4.2A 45 55
VGS = -10V , ID = -4.2A, TJ = 125°C 69 90
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 105 135 pF
Reverse Transfer Capacitance 55 80 pF
VDS = -20V, VGS = 0V,
f = 1MHz
530 705 pF
Gate Resistance f = 1MHz 6.1 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 3 10 ns
Turn-Off Delay Time 15 28 ns
VDD = -20V, ID = -4.2A,
VGS = -10V, R
GEN
= 6Ω
7 13 ns
Fall Time 3 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 1.7 nC
= 0V to -10V
GS
= 0V to -5V 6 9 nC
GS
VDD = -20V,
ID = -4.2A
11 15 nC
Gate to Drain “Miller” Charge 2.2 nC
mΩVGS = -4.5V, ID = -3.2A 70 80
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
1: R
θJA
R
θJC
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 7 14 nC
is guaranteed by design while R
is determined by the user’s board design.
θJA
GS
IF = -4.2A, di/dt = 100A/µs
a.
78°C/W when mounted on a 1
2
in
pad of 2 oz copper on FR-4
board.
= 0V, IS = -1.3A (Note 2) -0.8 -1.2 V
16 29 ns
b.
156°C/W when mounted on a
minimum pad of 2 oz copper.
2
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