Fairchild FDC3535 service manual

FDC3535

SuperSOTTM -6

G

S

D

D

D

D

Pin 1

1

2

3

6

5

4

D

D

G

D

D

S

P-Channel Power Trench® MOSFET

-80 V, -2.1 A, 183 mΩ

Features

 Max r
 Max r
 High performance trench technology for extremely low r
 High power and current handling capability in a widely used

surface mount package

 Fast switching speed
 100% UIL Tested
 RoHS Compliant

= 183 mΩ at VGS = -10 V, ID = -2.1 A

DS(on)

= 233 mΩ at VGS = -4.5 V, ID = -1.9 A

DS(on)

DS(on)

General Description

This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for r
ruggedness.

Applications

 Load Switch
 Synchronous Rectifier

June 2010

®

, switching performance and

DS(on)

process that has

FDC3535 P-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C

Drain to Source Voltage -80 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) -2.1

-Pulsed -10
Single Pulse Avalanche Energy (Note 3) 37 mJ
Power Dissipation (Note 1a) 1.6
Power Dissipation (Note 1b) 0.7
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 30
Thermal Resistance, Junction to Ambient (Note 1a) 78

.535 FDC3535 SSOT-6 7 ’’ 8 mm 3000 units

= 25 °C unless otherwise noted

A

1

A

W

°C/W

www.fairchildsemi.com

FDC3535 P-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -80 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = -64 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= -250 μA, referenced to 25 °C -64 mV/°C

D

= 0 V -1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA-1-1.6-3V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= -250 μA, referenced to 25 °C 5 mV/°C

D

V

= -10 V, ID = -2.1 A 147 183

GS

= -4.5 V, ID = -1.9 A 176 233

GS

= -10 V, ID = -2.1 A, TJ = 125 °C 246 307

V

GS

Forward Transconductance VDD = -10 V, ID = -2.1 A 6.3 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 49 65 pF
Reverse Transfer Capacitance 24 40 pF

= -40 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 5.7 Ω

659 880 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 3.1 10 ns
Turn-Off Delay Time 23 38 ns

= -40 V, ID = -2.1 A,

V

DD

V

= -10 V, R

GS

GEN

= 6 Ω

Fall Time 2.9 10 ns
Total Gate Charge VGS = 0 V to -10 V
Total Gate Charge V
Total Gate Charge 1.6 nC

= 0 V to -4.5 V 6.8 10 nC

GS

= -40 V

V

DD

I

= -2.1 A

D

Gate to Drain “Miller” Charge 2.7 nC

6.5 13 ns

14 20 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

θJA

R

is guaranteed by design while R

θJC

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. Starting T

©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 23 38 nC

is determined by the user's board design.

θCA

= 25 oC, L = 3 mH, IAS = -5 A, VDD = -80 V, VGS = -10 V.

J

= 0 V, IS = -2.1 A (Note 2) -0.81 -1.3 V

GS

= -2.1 A, di/dt = 100 A/μs

I

F

a. 78 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

2

25 40 ns

b.175 °C/W when mounted on
a minimum pad of 2 oz copper

www.fairchildsemi.com

FDC3535 P-Channel Power Trench

012345

0

2

4

6

8

10

VGS = -3.5 V

VGS = -10 V

VGS = -2.5 V

VGS = -3 V

VGS = -4.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

-I

D

, DRAIN CURRENT (A)

-VDS, DRA IN TO SOURCE VOLTAGE (V)

0246810

0

1

2

3

4

VGS = -3.5 V

VGS = -2.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT (A)

VGS = -4.5 V

VGS = -3 V

V

GS

= -10 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = - 2.1 A
V

GS

= -10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST ANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

100

200

300

400

500

600

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = 125 oC

T

J

= 25

o

C

ID = -2.1 A

r

DS(on)

, DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

-VGS, GATE TO S OURCE VOLTAGE ( V )

12345

0

2

4

6

8

10

TJ = 25 oC

V

DS

= -5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 150 oC

-I

D

, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VO LTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

-I

S

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

®

MOSFET

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDC3535 Rev. C

Figure 5. Transfer Characteristics

Figure 4.

On-Res istance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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