Fairchild FDC2512 service manual
FDC2512
150V N-Channel PowerTrench
MOSFET
FDC2512
October 2009
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
Features
• 1.4 A, 150 V. R
R
• High performance trench technology for extremely
DS(ON)
low R
• Low gate charge (8nC typ)
• High power and current handling capability
• Fast switching speed
= 425 mΩ @ VGS = 10 V
DS(ON)
= 475 mΩ @ VGS = 6 V
DS(ON)
S
D
D
1
2
6
5
G
SuperSOT -6
TM
D
D
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
3
4
Symbol Parameter Ratings Units
V
Drain-Source Voltage 150 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 1.4 A
– Pulsed 8
E
AS
TJ, T
stg
Single Pulse Avalanche Energy
Maximum Power Dissipation (Note 1a) 1.6 W PD
Operating and Storage Junction Temperature Range
(Note 3)
(Note 1b)
13.5 mJ
± 20
0.8
−55 to +150 °C
V
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 78
(Note 1) 30
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.252 FDC2512 7’’ 8mm 3000 units
2009 Fairchild Sem iconductor Corporation
°C/W
°C/W
FDC2512 Rev B4 (W )
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbl Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
150 V
147
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On Resistance
On–State Drain Current VGS = 10 V, VDS = 5 V 4 A
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
= 10 V, ID = 1.4 A
V
GS
V
= 6.0 V, ID = 1.3 A
GS
= 10 V, ID = 1.4 A, TJ = 125°C
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 1.4 A 4 S
2 2.6 4 V
–5.6
319
332
624
425
475
875
mV/°C
mΩ
Dynamic Characteristics
V
C
Input Capacitance 344 pF
iss
C
Output Capacitance 22 pF
oss
C
Reverse Transfer Capacitance
rss
= 75 V, V
DS
f = 1.0 MHz
= 0 V,
GS
9 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 6.5 13 ns
d(on)
tr Turn–On Rise Time 3.5 7 ns
t
Turn–Off Delay Time 22 33 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 8 11 nC
Qgs Gate–Source Charge 1.5 nC
Qgd Gate–Drain Charge
V
= 75 V, ID = 1 A,
DD
V
= 10 V, R
GS
V
= 75 V, ID = 1.4 A,
DS
= 10 V
V
GS
GEN
= 6 Ω
4 8 ns
2.3 nC
FDC2512
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A
VSD
t
rr
Qrr Diode Reverse Recovery Charge
Notes:
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
1.R
θJA
the drain pins. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting T
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time 45.8 nS
is guaranteed by design while R
θJC
= 25oC; N-ch: L = 3mH, IAS = 3A, VDD = 150V, VGS = 10V; 100% UIL tested.
J
θCA
a) 78°C/W when
mounted on a 1in2 pad
of 2 oz copper
V
= 0 V, IS = 1.3 A (Note 2) 0.8 1.2 V
GS
I
= 1.4A,
F
d
= 300 A/µs (Note 2)
iF/dt
is determined by the user's board design.
119 nC
b) 156°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
FDC2512 Rev B4(W )
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